Part Details for SI7478DP-T1-E3 by Vishay Intertechnologies
Results Overview of SI7478DP-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7478DP-T1-E3 Information
SI7478DP-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7478DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2101457
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element14 Asia-Pacific | , MOSFET, N, 60V, 15A, POWERPAK RoHS: Compliant Min Qty: 5 Container: Cut Tape | 10 |
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$4.0300 | Buy Now |
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DISTI #
2101457RL
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element14 Asia-Pacific | , MOSFET, N, 60V, 15A, POWERPAK RoHS: Compliant Min Qty: 5 Container: Reel | 10 |
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$4.0300 | Buy Now |
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DISTI #
2335081
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element14 Asia-Pacific | , N , MOSFET, 60V, 20A, POWERPAK SO RoHS: Compliant Min Qty: 3000 Container: Reel | 0 |
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$1.5100 / $1.6400 | Buy Now |
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DISTI #
SI7478DP-T1-E3
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Avnet Americas | Power MOSFET, N Channel, 60 V, 20 A, 7.5 Milliohms, PowerPAK SO, 8 Pins, Surface Mount - Tape and Reel (Alt: SI7478DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.2392 / $1.4250 | Buy Now |
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DISTI #
781-SI7478DP-T1-E3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 3556 |
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$1.4300 / $3.6600 | Buy Now |
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Bristol Electronics | 610 |
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RFQ | ||
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Quest Components | 15A, 60V, 0.0075OHM, N-CHANNEL, SI, POWER, MOSFET | 488 |
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$7.5000 / $15.0000 | Buy Now |
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Quest Components | 15A, 60V, 0.0075OHM, N-CHANNEL, SI, POWER, MOSFET | 102 |
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$1.7824 / $3.5648 | Buy Now |
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DISTI #
SI7478DP-T1-E3
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TTI | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 3000 In Stock |
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$1.4300 / $1.4500 | Buy Now |
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DISTI #
SI7478DP-T1-E3.
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TTI | MOSFETs 60V 20A 5.4W 7.5mohm @ 10V pbFree: Pb-Free Min Qty: 10 Package Multiple: 10 Container: Cut Tape |
Americas - 750 In Stock |
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$3.6600 | Buy Now |
Part Details for SI7478DP-T1-E3
SI7478DP-T1-E3 CAD Models
SI7478DP-T1-E3 Part Data Attributes
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SI7478DP-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7478DP-T1-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 15A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.4 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7478DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7478DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7478DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7478DP-T1-E3 | Vishay Siliconix | Check for Price | Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R | SI7478DP-T1-E3 vs SI7478DP-T1-E3 |
| SI7478DP-T1-GE3 | Vishay Siliconix | Check for Price | Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R | SI7478DP-T1-E3 vs SI7478DP-T1-GE3 |
SI7478DP-T1-E3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7478DP-T1-E3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
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The maximum allowed voltage on the input pins of the SI7478DP-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.
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Yes, the SI7478DP-T1-E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI).
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Handle the SI7478DP-T1-E3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage to the device. Vishay recommends using an ESD wrist strap or mat and storing the devices in ESD-protective packaging.