Datasheets
SI7469DP-T1-GE3 by:

Power Field-Effect Transistor, 10.2A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7469DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7469DP-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI7469DP-T1-GE3 Information

SI7469DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

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DP83620SQE/NOPB Texas Instruments Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85
DS100BR111ASQE/NOPB Texas Instruments DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85

Price & Stock for SI7469DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 61AC1941
Newark Mosfet, P-Ch, -80V, -28A, Powerpak So-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-28A, Drain Source Voltage Vds:-80V, On Resistance Rds(On):0.021Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Vishay SI7469DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2591
  • 1 $2.7200
  • 10 $2.4500
  • 25 $2.3600
  • 50 $2.2600
  • 100 $2.1700
$2.1700 / $2.7200 Buy Now
DISTI # 15R5209
Newark P Channel Mosfet, -80V, 28A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7469DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.4000
  • 4,000 $1.2700
  • 6,000 $1.2300
  • 10,000 $1.1900
$1.1900 / $1.4000 Buy Now
DISTI # SI7469DP-T1-GE3
Avnet Americas Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO - Tape and Reel (Alt: SI7469DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.0750
  • 6,000 $1.0578
  • 12,000 $1.0412
  • 18,000 $1.0238
  • 24,000 $1.0118
$1.0118 / $1.0750 Buy Now
DISTI # 781-SI7469DP-GE3
Mouser Electronics MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 112354
  • 1 $2.0000
  • 10 $1.6100
  • 100 $1.3900
  • 500 $1.2500
  • 1,000 $1.1600
  • 3,000 $1.1000
$1.1000 / $2.0000 Buy Now
DISTI # V36:1790_09216368
Arrow Electronics Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2429 Americas - 36000
  • 3,000 $1.0510
$1.0510 Buy Now
DISTI # E02:0323_00530290
Arrow Electronics Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2428 Europe - 12000
  • 3,000 $1.0467
$1.0467 Buy Now
DISTI # V72:2272_09216368
Arrow Electronics Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2308 Container: Cut Strips Americas - 3
  • 1 $1.1544
$1.1544 Buy Now
Future Electronics Si7469DP Series P-Channel 80 V 25 mOhms SMT Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel 3000
Reel
  • 3,000 $1.1600
$1.1600 Buy Now
DISTI # 83631684
Verical Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2429 Americas - 36000
  • 3,000 $1.0510
$1.0510 Buy Now
DISTI # 83627314
Verical Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2428 Americas - 3000
  • 3,000 $1.9600
$1.9600 Buy Now
DISTI # SI7469DP-T1-GE3
TTI MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 39000
In Stock
  • 3,000 $1.1800
$1.1800 Buy Now
Future Electronics Si7469DP Series P-Channel 80 V 25 mOhms SMT Power Mosfet - PowerPAK SO-8 Min Qty: 3000 Package Multiple: 3000 3000
null
  • 3,000 $1.1600
$1.1600 Buy Now
DISTI # SI7469DP-T1-GE3
TME Transistor: P-MOSFET, unipolar, -80V, -28A, Idm: -40A, 53W Min Qty: 1 0
  • 1 $3.0100
  • 5 $2.5200
  • 25 $2.2700
  • 100 $2.0000
  • 500 $1.8100
  • 3,000 $1.6800
$1.6800 / $3.0100 RFQ
Chip 1 Exchange INSTOCK 11700
RFQ
DISTI # SI7469DP-T1-GE3
Avnet Asia Trans MOSFET P-CH 80V 28A 8-Pin PowerPAK SO (Alt: SI7469DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 0
RFQ
DISTI # SI7469DP-T1-GE3
EBV Elektronik Trans MOSFET PCH 80V 28A 8Pin PowerPAK SO (Alt: SI7469DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 80V 28A 0.02510V28A 53W 1 piece P-channel PowerPAK1212-8 MOSFETs ROHS 11459
  • 1 $1.5600
  • 10 $1.3337
  • 30 $1.1919
  • 100 $1.0456
  • 500 $0.9792
  • 1,000 $0.9505
$0.9505 / $1.5600 Buy Now
Vyrian Transistors 24325
RFQ
Wuhan P&S 25m��,-80V,-28A,P-Channel Power MOSFET Min Qty: 1 9000
  • 1 $14.3700
  • 100 $4.7900
  • 500 $4.4300
  • 1,000 $4.3100
$4.3100 / $14.3700 Buy Now

Part Details for SI7469DP-T1-GE3

SI7469DP-T1-GE3 CAD Models

SI7469DP-T1-GE3 Part Data Attributes

SI7469DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7469DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 10.2A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 10.2 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

SI7469DP-T1-GE3 Related Parts

SI7469DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7469DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.

  • The SI7469DP-T1-GE3 is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures.

  • Yes, the SI7469DP-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the required specifications.

  • The SI7469DP-T1-GE3 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe to prevent damage to the device.

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