Part Details for SI7465DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7465DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7465DP-T1-GE3 Information
SI7465DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7465DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI7465DP-T1-GE3CT-ND
|
DigiKey | MOSFET P-CH 60V 3.2A PPAK SO-8 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6033 In Stock |
|
$0.4750 / $1.5400 | Buy Now |
Part Details for SI7465DP-T1-GE3
SI7465DP-T1-GE3 CAD Models
SI7465DP-T1-GE3 Part Data Attributes
|
|
SI7465DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI7465DP-T1-GE3
Vishay Siliconix
Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO T/R
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 24.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 0.064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.5 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7465DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7465DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7465DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7465DP-T1-E3 | Vishay Siliconix | Check for Price | Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO T/R | SI7465DP-T1-GE3 vs SI7465DP-T1-E3 |
SI7465DP-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the SI7465DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
-
To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The enable pin (EN) should be tied to VIN or a logic signal. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
-
The SI7465DP-T1-GE3 is rated for operation in ambient temperatures ranging from -40°C to 125°C. However, the device's performance and reliability may degrade at extreme temperatures.
-
While the SI7465DP-T1-GE3 is a high-quality device, it is not specifically designed for high-reliability or automotive applications. For such applications, consider using devices with specific automotive or high-reliability certifications, such as AEC-Q100 or MIL-STD-883.
-
To prevent electrostatic discharge (ESD) damage, handle the SI7465DP-T1-GE3 with an ESD wrist strap or mat. Ensure the workspace is ESD-protected, and avoid touching the device's pins or leads.