Part Details for SI7456DP-T1-E3 by Vishay Siliconix
Results Overview of SI7456DP-T1-E3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7456DP-T1-E3 Information
SI7456DP-T1-E3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7456DP-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7456DP-T1-E3CT-ND
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DigiKey | MOSFET N-CH 100V 5.7A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4711 In Stock |
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$1.1375 / $3.5200 | Buy Now |
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DISTI #
70026273
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RS | N-CHANNEL 100V (D-S) MOSFET Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.9400 | RFQ |
Part Details for SI7456DP-T1-E3
SI7456DP-T1-E3 CAD Models
SI7456DP-T1-E3 Part Data Attributes
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SI7456DP-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7456DP-T1-E3
Vishay Siliconix
TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SO-8, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.9 W | |
| Power Dissipation-Max (Abs) | 1.9 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for SI7456DP-T1-E3
This table gives cross-reference parts and alternative options found for SI7456DP-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7456DP-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7456DP-T1 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | SI7456DP-T1-E3 vs SI7456DP-T1 |
SI7456DP-T1-E3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7456DP-T1-E3 is a standard SOT23-6 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to minimize noise and ensure stability.
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The SI7456DP-T1-E3 is rated for operation from -40°C to 125°C. However, it's recommended to derate the device's performance at extreme temperatures to ensure reliability and longevity.
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Yes, the SI7456DP-T1-E3 is AEC-Q100 qualified, making it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions and derating guidelines to ensure the device meets the required reliability standards.
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To prevent ESD damage, handle the SI7456DP-T1-E3 with ESD-protective equipment, such as wrist straps or mats. Ensure the device is stored in an ESD-protective package or bag when not in use.