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Transistors / Power Field-Effect Transistors / SI7456DDP-T1-GE3
Datasheets
SI7456DDP-T1-GE3 by:

Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7456DDP-T1-GE3 by Vishay Intertechnologies

Results Overview of SI7456DDP-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI7456DDP-T1-GE3 Information

SI7456DDP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7456DDP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 63W4148
Newark Mosfet, N-Ch, 100V, 27.8A, Powerpak So, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:27.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Vishay SI7456DDP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 6867
  • 1 $0.9160
  • 10 $0.9160
  • 25 $0.8400
  • 50 $0.8400
  • 100 $0.8400
  • 500 $0.7750
$0.7750 / $0.9160 Buy Now
DISTI # 63W4148
Avnet Americas Power MOSFET, N Channel, 100 V, 27.8 A, 0.017 ohm, PowerPAK SO, Surface Mount - Bulk (Alt: 63W4148) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk 416 Partner Stock
  • 1 $1.7500
  • 10 $1.3000
  • 25 $1.2000
  • 50 $1.1100
  • 100 $1.0100
$1.0100 / $1.7500 Buy Now
DISTI # SI7456DDP-T1-GE3
Avnet Americas Power MOSFET, N Channel, 100 V, 27.8 A, 0.017 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SI7456DDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.6750
  • 6,000 $0.6642
  • 12,000 $0.6538
  • 18,000 $0.6429
  • 24,000 $0.6353
$0.6353 / $0.6750 Buy Now
DISTI # 78-SI7456DDP-T1-GE3
Mouser Electronics MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 9374
  • 1 $1.4100
  • 10 $1.1600
  • 25 $1.1500
  • 100 $0.9440
  • 500 $0.8430
  • 1,000 $0.7550
  • 3,000 $0.7010
$0.7010 / $1.4100 Buy Now
DISTI # V72:2272_09215658
Arrow Electronics Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2332 Container: Cut Strips Americas - 1455
  • 1 $0.9304
  • 10 $0.8573
  • 25 $0.8464
  • 50 $0.8379
  • 100 $0.7749
  • 250 $0.7671
  • 500 $0.7460
  • 1,000 $0.7248
$0.7248 / $0.9304 Buy Now
DISTI # 69863775
Verical Trans MOSFET N-CH 100V 27.8A 8-Pin PowerPAK SO EP T/R Min Qty: 9 Package Multiple: 1 Date Code: 2332 Americas - 1455
  • 9 $0.8573
  • 25 $0.8464
  • 50 $0.8379
  • 100 $0.7749
  • 250 $0.7671
  • 500 $0.7460
  • 1,000 $0.7248
$0.7248 / $0.8573 Buy Now
DISTI # SI7456DDP-T1-GE3
TTI MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 3000
In Stock
  • 3,000 $0.6940
  • 6,000 $0.6800
$0.6800 / $0.6940 Buy Now
DISTI # STDMOS1281
Rutronik N-CH 100V 27,8A 23mOhm PP SO8 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel Stock DE - 39000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 3,000 $0.6756
$0.6756 Buy Now
DISTI # SI7456DDP-T1-GE3
EBV Elektronik Power MOSFET N Channel 100 V 278 A 0017 ohm PowerPAK SO Surface Mount (Alt: SI7456DDP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 6282
RFQ

Part Details for SI7456DDP-T1-GE3

SI7456DDP-T1-GE3 CAD Models

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SI7456DDP-T1-GE3 Part Data Attributes

Parametric Data
SI7456DDP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7456DDP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11.2 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 27.8 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 70 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7456DDP-T1-GE3 Related Parts

SI7456DDP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7456DDP-T1-GE3 is a standard SOIC-8 package with a 1.27mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN81142.

  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note AN81142. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.

  • The SI7456DDP-T1-GE3 has an operating temperature range of -40°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.

  • Yes, the SI7456DDP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is PPAP capable. However, it's essential to consult with Vishay Intertechnologies' application engineers to ensure the device meets the specific requirements of your application.

  • To prevent electrostatic discharge (ESD) damage, handle the SI7456DDP-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a conductive bag or tube when not in use.

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