Part Details for SI7434DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7434DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7434DP-T1-GE3 Information
SI7434DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7434DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7434DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 250V 2.3A PPAK SO-8 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
556 In Stock |
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$1.6977 / $4.4200 | Buy Now |
Part Details for SI7434DP-T1-GE3
SI7434DP-T1-GE3 CAD Models
SI7434DP-T1-GE3 Part Data Attributes
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SI7434DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7434DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 8.4 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 2.3 A | |
| Drain-source On Resistance-Max | 0.155 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7434DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7434DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7434DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7434DP-T1-E3 | Vishay Intertechnologies | $1.0000 | Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 | SI7434DP-T1-GE3 vs SI7434DP-T1-E3 |
SI7434DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7434DP-T1-GE3 is a standard SO-8 package with a 1.27mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-55°C to 175°C), and follow proper thermal management practices, such as providing adequate heat sinking and airflow.
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The maximum allowed voltage on the input pins of the SI7434DP-T1-GE3 is 5V, which is the maximum rating for the device. Exceeding this voltage may cause damage to the device.
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Yes, the SI7434DP-T1-GE3 is suitable for use in switching power supply applications due to its high voltage and current ratings, as well as its fast switching times. However, ensure that the device is properly biased and that the application is designed to meet the device's specifications.
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To protect the SI7434DP-T1-GE3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.