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Part Details for SI7415DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7415DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7415DN-T1-GE3 Information
SI7415DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI7415DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
72R4249
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Newark | Mosfet, P Channel, 60V, 3.6A, Ppak So8, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:3.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI7415DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 12549 |
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$1.2300 / $1.9900 | Buy Now |
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DISTI #
SI7415DN-T1-GE3
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Avnet Americas | P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI7415DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.6706 / $0.7125 | Buy Now |
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DISTI #
781-SI7415DN-T1-GE3
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Mouser Electronics | MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 41901 |
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$0.7120 / $2.0900 | Buy Now |
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Future Electronics | PB- FREE P-CHANNEL 60-V (D-S) MOSFET- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel | 0Reel |
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$0.6850 | Buy Now |
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DISTI #
SI7415DN-T1-GE3
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TTI | MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 24000 In Stock |
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$0.7010 / $0.7150 | Buy Now |
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Future Electronics | PB- FREE P-CHANNEL 60-V (D-S) MOSFET- LEAD(PB) AND HALOGEN FREE Min Qty: 3000 Package Multiple: 3000 |
3000 null |
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$0.6850 | Buy Now |
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DISTI #
LVMOS1044
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Rutronik | P-CH -60V -5,7A 54mOhm PPAK1212-8 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Stock DE - 6000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.7245 / $0.9391 | Buy Now |
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Chip 1 Exchange | INSTOCK | 31200 |
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RFQ | |
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DISTI #
SI7415DN-T1-GE3
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Avnet Asia | P-CHANNEL 60-V (D-S) MOSFET (Alt: SI7415DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | 9000 |
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RFQ | |
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DISTI #
SI7415DN-T1-GE3
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EBV Elektronik | PCHANNEL 60V DS MOSFET (Alt: SI7415DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI7415DN-T1-GE3
SI7415DN-T1-GE3 CAD Models
SI7415DN-T1-GE3 Part Data Attributes
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SI7415DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7415DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | FAST SWITCHING | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.6 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.8 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7415DN-T1-GE3
This table gives cross-reference parts and alternative options found for SI7415DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7415DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7415DN-T1-GE3 | Vishay Siliconix | Check for Price | Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R | SI7415DN-T1-GE3 vs SI7415DN-T1-GE3 |
| SI7415DN-T1-E3 | Vishay Siliconix | Check for Price | Trans MOSFET P-CH 60V 3.6A 8-Pin PowerPAK 1212 T/R | SI7415DN-T1-GE3 vs SI7415DN-T1-E3 |
SI7415DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7415DN-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V and 5.5V. The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ground. Additionally, ensure the input and output pins are not overloaded, and the device is operated within the recommended temperature range.
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The maximum allowed power dissipation for the SI7415DN-T1-GE3 is 1.4W. To ensure reliable operation, the device should be operated at a maximum junction temperature of 150°C. A thermal derating of 12.5mW/°C is recommended above 25°C.
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Yes, the SI7415DN-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured with a high-reliability process. However, it's essential to consult with Vishay Intertechnologies for specific application requirements and qualification.
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The SI7415DN-T1-GE3 has an integrated ESD protection diode. However, it's still essential to follow proper ESD handling procedures when handling the device, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container.