Part Details for SI7326DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7326DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7326DN-T1-GE3 Information
SI7326DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI7326DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
16P3839
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Newark | N Channel Mosfet, 30V, 10A Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:10A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:25V, Power Dissipation:1.5W Rohs Compliant: Yes |Vishay SI7326DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
SI7326DN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 6.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7326DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.2705 / $0.2875 | Buy Now |
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Bristol Electronics | 20771 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6.5A I(D), 30V, 0.0195OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 16616 |
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$0.3444 / $1.1480 | Buy Now |
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DISTI #
SI7326DN-T1-GE3
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EBV Elektronik | Trans MOSFET NCH 30V 65A 8Pin PowerPAK 1212 TR (Alt: SI7326DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI7326DN-T1-GE3
SI7326DN-T1-GE3 CAD Models
SI7326DN-T1-GE3 Part Data Attributes
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SI7326DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7326DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.0195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.5 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SI7326DN-T1-GE3 Frequently Asked Questions (FAQ)
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A good PCB layout for the SI7326DN-T1-GE3 should minimize parasitic inductance and capacitance. Keep the drain and source pins as close as possible to the PCB ground plane, and use a solid ground plane under the device. Also, keep the input and output tracks short and wide to reduce impedance.
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To ensure reliable operation at high temperatures, make sure to follow the recommended thermal management guidelines. Use a heat sink with a thermal resistance of less than 10°C/W, and ensure good airflow around the device. Also, derate the power dissipation according to the temperature derating curve in the datasheet.
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The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
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Yes, the SI7326DN-T1-GE3 is suitable for switching applications. However, ensure that the switching frequency is within the recommended range (typically up to 100 kHz), and follow the recommended gate drive circuitry to minimize switching losses.
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To protect the SI7326DN-T1-GE3 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the PCB and assembly process follow ESD-safe practices, and consider adding ESD protection devices such as TVS diodes or ESD arrays to the circuit.