-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SI7228DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7228DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Communication and Networking
SI7228DN-T1-GE3 Information
SI7228DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7228DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
15R5184
|
Newark | Dual N-Channel 30-V(D-S) Mosfet |Vishay SI7228DN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
|
Velocity Electronics | Our Stock | 70 |
|
RFQ | |
|
DISTI #
SI7228DN-T1-GE3
|
EBV Elektronik | Transistor MOSFET Array Dual NCH 30V 26A 8Pin PowerPAK 1212 TR (Alt: SI7228DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 1320 |
|
RFQ |
Part Details for SI7228DN-T1-GE3
SI7228DN-T1-GE3 CAD Models
SI7228DN-T1-GE3 Part Data Attributes
|
|
SI7228DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI7228DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 9.8 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.8 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 23 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7228DN-T1-GE3
This table gives cross-reference parts and alternative options found for SI7228DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7228DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC150N03LDGATMA1 | Infineon Technologies AG | $0.4953 | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SI7228DN-T1-GE3 vs BSC150N03LDGATMA1 |
| BSC150N03LDG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SI7228DN-T1-GE3 vs BSC150N03LDG |
| SI7270DP-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SI7228DN-T1-GE3 vs SI7270DP-T1-GE3 |
SI7228DN-T1-GE3 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the SI7228DN-T1-GE3 is -55°C to 150°C.
-
Yes, the SI7228DN-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
-
The typical turn-on and turn-off time for the SI7228DN-T1-GE3 is around 10-20 ns, depending on the specific application and operating conditions.
-
Yes, the SI7228DN-T1-GE3 is designed for high-reliability applications, including automotive, industrial, and aerospace systems, due to its high-quality manufacturing process and rigorous testing.
-
The maximum voltage rating for the SI7228DN-T1-GE3 is 200V, making it suitable for a wide range of power electronics applications.