Part Details for SI7186DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7186DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7186DP-T1-GE3 Information
SI7186DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI7186DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 42 |
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Buy Now | |
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DISTI #
SI7186DP-T1-GE3
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EBV Elektronik | NCHANNEL 80V DS MOSFET (Alt: SI7186DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI7186DP-T1-GE3
SI7186DP-T1-GE3 CAD Models
SI7186DP-T1-GE3 Part Data Attributes
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SI7186DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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SI7186DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 14.5A I(D), 80V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 14.5 A | |
| Drain-source On Resistance-Max | 0.0125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 64 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7186DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7186DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7186DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7186DP-T1-GE3 | Vishay Siliconix | Check for Price | MOSFET N-CH 80V 32A PPAK 8SOIC | SI7186DP-T1-GE3 vs SI7186DP-T1-GE3 |
SI7186DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power dissipation. Additionally, ensure that the device is soldered correctly, and the PCB is designed to minimize thermal stress.
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The SI7186DP-T1-GE3 has built-in ESD protection, but it's still essential to follow standard ESD handling precautions during assembly and testing. This includes using ESD-safe workstations, wrist straps, and packaging materials, as well as minimizing handling and exposure to static-prone environments.
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The SI7186DP-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. It's essential to consult with Vishay Intertechnologies and follow their guidelines for using commercial-grade devices in these applications.
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The recommended soldering and assembly techniques for the SI7186DP-T1-GE3 include using a soldering iron with a temperature range of 250°C to 260°C, a soldering time of 3-5 seconds, and a peak temperature of 260°C. It's also essential to follow the recommended PCB footprint and land pattern.