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Part Details for SI7178DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7178DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7178DP-T1-GE3 Information
SI7178DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7178DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84W7288
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Newark | Mosfet, N Channel, 100V, 0.0114Ohm, 60A, Powerpak So, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7178DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.4700 / $1.7900 | Buy Now |
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DISTI #
16P3830
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Newark | N Channel Mosfet, 100V, 60A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Vishay SI7178DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.0200 | Buy Now |
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DISTI #
SI7178DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7178DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.4250 | Buy Now |
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|
Quest Components | 104 |
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$1.3500 / $3.6000 | Buy Now | |
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DISTI #
SI7178DP-T1-GE3
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TTI | MOSFETs 100V 60A 104W 14mohm @ 10V pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 24000 In Stock |
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$1.2500 / $1.3000 | Buy Now |
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DISTI #
SI7178DP-T1-GE3
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IBS Electronics | SINGLE N-CHANNEL 100 V 0.014 OHMS SURFACE MOUNT POWER MOSFET - POWERPAK SO-8 Min Qty: 3000 Package Multiple: 1 | 0 |
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$1.6380 | Buy Now |
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DISTI #
SI7178DP-T1-GE3
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EBV Elektronik | Trans MOSFET NCH 100V 149A 8Pin PowerPAK SO TR (Alt: SI7178DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 3000 |
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Buy Now | |
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Vyrian | Transistors | 10243 |
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RFQ |
Part Details for SI7178DP-T1-GE3
SI7178DP-T1-GE3 CAD Models
SI7178DP-T1-GE3 Part Data Attributes
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SI7178DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7178DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14.9 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SI7178DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7178DP-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.
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To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple the power supply lines with 10 uF and 100 nF capacitors. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1 kΩ.
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The SI7178DP-T1-GE3 is rated for operation from -40°C to 150°C (junction temperature). However, for optimal performance and reliability, it is recommended to operate the device within the -20°C to 125°C range.
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Yes, the SI7178DP-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive grade and is manufactured with a high-reliability process.
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The SI7178DP-T1-GE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.