Part Details for SI7149DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7149DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
Robotics and Drones
SI7149DP-T1-GE3 Information
SI7149DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7149DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7149DP-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 30V 50A PPAK SO-8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
20243 In Stock |
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$0.6375 / $2.2700 | Buy Now |
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Quest Components | 89 |
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$1.5360 / $3.0720 | Buy Now |
Part Details for SI7149DP-T1-GE3
SI7149DP-T1-GE3 CAD Models
SI7149DP-T1-GE3 Part Data Attributes
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SI7149DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7149DP-T1-GE3
Vishay Siliconix
Trans MOSFET P-CH 30V 23.7A 8-Pin SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 23.7 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7149DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7149DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7149DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7149DP-T1-GE3 | Vishay Intertechnologies | $1.1177 | Power Field-Effect Transistor, 23.7A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 | SI7149DP-T1-GE3 vs SI7149DP-T1-GE3 |
SI7149DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7149DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
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To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the VOUT pin to a capacitor (e.g., 1uF) to ground. Additionally, ensure the EN pin is tied to a logic-level signal (e.g., 3.3V or 5V) to enable the device.
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The maximum allowed power dissipation for the SI7149DP-T1-GE3 is 1.4W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended operating range to avoid overheating.
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The SI7149DP-T1-GE3 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal resistance when operating in high-temperature environments to avoid overheating and ensure reliable operation.
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To troubleshoot issues with the SI7149DP-T1-GE3, start by verifying the power supply voltage, checking for proper biasing, and ensuring the EN pin is properly driven. Use an oscilloscope to monitor the output voltage and current. Consult the datasheet and application notes for additional guidance.