Datasheets
SI7139DP-T1-GE3 by:

Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R

Part Details for SI7139DP-T1-GE3 by Vishay Siliconix

Results Overview of SI7139DP-T1-GE3 by Vishay Siliconix

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Applications Environmental Monitoring Industrial Automation Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems

SI7139DP-T1-GE3 Information

SI7139DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
DP83630SQX/NOPB Texas Instruments IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85
DP83620SQE/NOPB Texas Instruments Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85
DS100BR111ASQE/NOPB Texas Instruments DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85

Price & Stock for SI7139DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI7139DP-T1-GE3CT-ND
DigiKey MOSFET P-CH 30V 40A PPAK SO-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2410
In Stock
  • 1 $1.9500
  • 10 $1.3350
  • 100 $0.9039
  • 500 $0.7193
  • 1,000 $0.6824
  • 3,000 $0.5845
  • 6,000 $0.5575
$0.5575 / $1.9500 Buy Now
New Advantage Corporation Single P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $0.9167
  • 12,000 $0.8462
$0.8462 / $0.9167 Buy Now

Part Details for SI7139DP-T1-GE3

SI7139DP-T1-GE3 CAD Models

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SI7139DP-T1-GE3 Part Data Attributes

SI7139DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI7139DP-T1-GE3 Vishay Siliconix Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 22.4 A
Drain-source On Resistance-Max 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 70 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI7139DP-T1-GE3

This table gives cross-reference parts and alternative options found for SI7139DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7139DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI7149DP-T1-GE3 Vishay Intertechnologies $1.1177 Power Field-Effect Transistor, 23.7A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 SI7139DP-T1-GE3 vs SI7149DP-T1-GE3

SI7139DP-T1-GE3 Related Parts

SI7139DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7139DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and decouple it with a 1uF capacitor to GND. Additionally, connect the VOUT pin to a load or a voltage regulator, and decouple it with a 10uF capacitor to GND.

  • The SI7139DP-T1-GE3 is rated for operation from -40°C to 125°C. However, it's recommended to derate the device's performance at temperatures above 85°C to ensure reliable operation.

  • Yes, the SI7139DP-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and ensure proper thermal management to ensure reliable operation.

  • To troubleshoot issues with the SI7139DP-T1-GE3, start by verifying the power supply voltage, checking for proper decoupling, and ensuring the device is operated within the recommended temperature range. Use an oscilloscope to monitor the output voltage and current, and consult the datasheet for specific troubleshooting guidelines.

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