Datasheets
SI6435ADQ-T1-GE3 by: Vishay Intertechnologies

Small Signal Field-Effect Transistor, 4.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for SI6435ADQ-T1-GE3 by Vishay Intertechnologies

Results Overview of SI6435ADQ-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI6435ADQ-T1-GE3 Information

SI6435ADQ-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SI6435ADQ-T1-GE3

Part # Distributor Description Stock Price Buy
Bristol Electronics   100
RFQ
Chip 1 Exchange INSTOCK 100
RFQ

Part Details for SI6435ADQ-T1-GE3

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SI6435ADQ-T1-GE3 Part Data Attributes

SI6435ADQ-T1-GE3 Vishay Intertechnologies
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SI6435ADQ-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 4.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TSSOP-8
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.7 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

SI6435ADQ-T1-GE3 Related Parts

SI6435ADQ-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI6435ADQ-T1-GE3 is a 5x5mm QFN package with a 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-1153.

  • To ensure proper soldering, follow the recommended soldering profile and guidelines provided in the Vishay Intertechnologies' application note AN-1153. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.

  • The maximum operating temperature range for the SI6435ADQ-T1-GE3 is -40°C to 125°C. However, the device can withstand storage temperatures from -55°C to 150°C.

  • The SI6435ADQ-T1-GE3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.

  • The recommended input capacitance for the SI6435ADQ-T1-GE3 is 10nF to 100nF. However, the optimal input capacitance value may vary depending on the specific application and operating conditions.

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