Part Details for SI6435ADQ-T1-GE3 by Vishay Intertechnologies
Results Overview of SI6435ADQ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SI6435ADQ-T1-GE3 Information
SI6435ADQ-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI6435ADQ-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 100 |
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RFQ | ||
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Chip 1 Exchange | INSTOCK | 100 |
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RFQ |
Part Details for SI6435ADQ-T1-GE3
SI6435ADQ-T1-GE3 CAD Models
SI6435ADQ-T1-GE3 Part Data Attributes
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SI6435ADQ-T1-GE3
Vishay Intertechnologies
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Datasheet
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SI6435ADQ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TSSOP-8 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.7 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
SI6435ADQ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI6435ADQ-T1-GE3 is a 5x5mm QFN package with a 0.5mm pitch. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-1153.
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To ensure proper soldering, follow the recommended soldering profile and guidelines provided in the Vishay Intertechnologies' application note AN-1153. Additionally, use a solder with a melting point below 260°C to prevent damage to the device.
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The maximum operating temperature range for the SI6435ADQ-T1-GE3 is -40°C to 125°C. However, the device can withstand storage temperatures from -55°C to 150°C.
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The SI6435ADQ-T1-GE3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.
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The recommended input capacitance for the SI6435ADQ-T1-GE3 is 10nF to 100nF. However, the optimal input capacitance value may vary depending on the specific application and operating conditions.