Part Details for SI5902BDC-T1-GE3 by Vishay Siliconix
Results Overview of SI5902BDC-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI5902BDC-T1-GE3 Information
SI5902BDC-T1-GE3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI5902BDC-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI5902BDC-T1-GE3CT-ND
|
DigiKey | MOSFET 2N-CH 30V 4A 1206-8 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
27 In Stock |
|
$1.1840 / $1.8600 | Buy Now |
Part Details for SI5902BDC-T1-GE3
SI5902BDC-T1-GE3 CAD Models
SI5902BDC-T1-GE3 Part Data Attributes
|
|
SI5902BDC-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI5902BDC-T1-GE3
Vishay Siliconix
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 |
Alternate Parts for SI5902BDC-T1-GE3
This table gives cross-reference parts and alternative options found for SI5902BDC-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5902BDC-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| DMP2066LSS-13 | Diodes Incorporated | $0.4692 | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SI5902BDC-T1-GE3 vs DMP2066LSS-13 |
| PHN210T,118 | NXP Semiconductors | Check for Price | PHN210T - Dual N-channel TrenchMOS intermediate level FET SOIC 8-Pin | SI5902BDC-T1-GE3 vs PHN210T,118 |
| PHN210T | Nexperia | Check for Price | Power Field-Effect Transistor | SI5902BDC-T1-GE3 vs PHN210T |
| IRF7706PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 | SI5902BDC-T1-GE3 vs IRF7706PBF |
| IRF4435 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | SI5902BDC-T1-GE3 vs IRF4435 |
| HP4936DYT | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI5902BDC-T1-GE3 vs HP4936DYT |
| PHP125T/R | NXP Semiconductors | Check for Price | TRANSISTOR 2.5 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | SI5902BDC-T1-GE3 vs PHP125T/R |
| HUF76113DK8 | Intersil Corporation | Check for Price | 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | SI5902BDC-T1-GE3 vs HUF76113DK8 |
| FW202 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SI5902BDC-T1-GE3 vs FW202 |
| HUF76105DK8 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | SI5902BDC-T1-GE3 vs HUF76105DK8 |
SI5902BDC-T1-GE3 Frequently Asked Questions (FAQ)
-
A good PCB layout for the SI5902BDC-T1-GE3 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device to facilitate heat dissipation. A minimum of 2 oz copper thickness is recommended.
-
To ensure proper biasing, the device should be operated within the recommended voltage range (VCC = 2.5V to 5.5V) and the input voltage (VIN) should be within the specified range (0.8V to 5.5V). Additionally, the input voltage should be decoupled with a 10uF capacitor to minimize noise.
-
The maximum allowable power dissipation for the SI5902BDC-T1-GE3 is 1.4W. Exceeding this limit can cause the device to overheat and potentially fail.
-
To protect the device from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the pins or leads during handling.
-
The recommended operating temperature range for the SI5902BDC-T1-GE3 is -40°C to 125°C. Operating the device outside of this range can affect its performance and reliability.