Part Details for SI3433CDV-T1-GE3 by Vishay Intertechnologies
Results Overview of SI3433CDV-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI3433CDV-T1-GE3 Information
SI3433CDV-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI3433CDV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AH6521
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Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI3433CDV-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 6000 |
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$0.1460 / $0.1940 | Buy Now |
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DISTI #
84R8034
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Newark | P Channel Mosfet, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1V, Power Dissipation:1.6W Rohs Compliant: Yes |Vishay SI3433CDV-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.1760 | Buy Now |
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DISTI #
SI3433CDV-T1-GE3
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Avnet Americas | Power MOSFET, P Channel, 20 V, 6 A, 0.031 ohm, TSOP, Surface Mount - Tape and Reel (Alt: SI3433CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 6000 |
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$0.1294 / $0.1375 | Buy Now |
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DISTI #
781-SI3433CDV-GE3
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Mouser Electronics | MOSFETs -20V Vds 8V Vgs TSOP-6 RoHS: Compliant | 2566 |
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$0.1460 / $0.4800 | Buy Now |
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DISTI #
E02:0323_00529922
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Arrow Electronics | Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2448 | Europe - 6000 |
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$0.1321 / $0.1508 | Buy Now |
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DISTI #
V36:1790_09216627
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Arrow Electronics | Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2429 | Americas - 6000 |
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$0.1162 / $0.1327 | Buy Now |
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DISTI #
V72:2272_09216627
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Arrow Electronics | Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2344 Container: Cut Strips | Americas - 2303 |
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$0.1340 / $0.2850 | Buy Now |
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Future Electronics | Single P-Channel 20 V 38 mOhm Surface Mount TrenchFET Power Mosfet - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel | 6000Reel |
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$0.1400 / $0.1460 | Buy Now |
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DISTI #
83638514
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Verical | Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2429 | Americas - 6000 |
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$0.1162 / $0.1327 | Buy Now |
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DISTI #
87864736
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Verical | Trans MOSFET P-CH 20V 6A 6-Pin TSOP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2448 | Americas - 6000 |
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$0.1328 / $0.1516 | Buy Now |
Part Details for SI3433CDV-T1-GE3
SI3433CDV-T1-GE3 CAD Models
SI3433CDV-T1-GE3 Part Data Attributes
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SI3433CDV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3433CDV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.2 A | |
| Drain-source On Resistance-Max | 0.038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 180 pF | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3433CDV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3433CDV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3433CDV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTGS5120PT1G | onsemi | $0.2313 | Single P-Channel Power MOSFET -60V -2.9A 111mΩ, TSOP-6, 3000-REEL | SI3433CDV-T1-GE3 vs NTGS5120PT1G |
| SI1069X-T1-GE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 0.94A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-89, 6 PIN | SI3433CDV-T1-GE3 vs SI1069X-T1-GE3 |
| SI3441DV | Rochester Electronics LLC | Check for Price | 3500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | SI3433CDV-T1-GE3 vs SI3441DV |
| NTGS3136PT1G | Rochester Electronics LLC | Check for Price | 5800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6 | SI3433CDV-T1-GE3 vs NTGS3136PT1G |
| FDC855N | Rochester Electronics LLC | Check for Price | 6100mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA, ROHS COMPLIANT, SUPERSOT-6 | SI3433CDV-T1-GE3 vs FDC855N |
| FDS6910 | Rochester Electronics LLC | Check for Price | 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | SI3433CDV-T1-GE3 vs FDS6910 |
| FDC637BNZ | Rochester Electronics LLC | Check for Price | 6200mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-6, 6 PIN | SI3433CDV-T1-GE3 vs FDC637BNZ |
| DMP3098LDM-7 | Diodes Incorporated | $0.3956 | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | SI3433CDV-T1-GE3 vs DMP3098LDM-7 |
| NTUD3169CZT5G | onsemi | $0.2747 | Complementary Small Signal MOSFET 20V, SOT-963 1x1, 0.35P, 8000-REEL | SI3433CDV-T1-GE3 vs NTUD3169CZT5G |
| SI4202DY-T1-GE3 | Vishay Intertechnologies | $0.6399 | Small Signal Field-Effect Transistor, 12.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | SI3433CDV-T1-GE3 vs SI4202DY-T1-GE3 |
SI3433CDV-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI3433CDV-T1-GE3 can be found in the Vishay Intertechnologies' application note AN81142, which provides a detailed layout and land pattern recommendation for optimal performance and thermal management.
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To ensure proper soldering, follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies' application note AN81143, which provides detailed information on soldering temperature, time, and techniques.
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The SI3433CDV-T1-GE3 has a thermal pad that must be connected to a thermal plane on the PCB to ensure proper heat dissipation. A thermal interface material (TIM) can be used to improve thermal conductivity. Additionally, ensure good airflow around the device and avoid blocking the thermal pad with components or soldermask.
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Yes, the SI3433CDV-T1-GE3 is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured in accordance with IATF 16949. However, it's essential to consult with Vishay Intertechnologies' application engineers to ensure the device meets the specific requirements of your application.
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For troubleshooting, refer to the Vishay Intertechnologies' application note AN81144, which provides a comprehensive guide to identifying and resolving common issues related to the SI3433CDV-T1-GE3. Additionally, consult with Vishay Intertechnologies' technical support team for personalized assistance.