Part Details for SI2303CDS-T1-E3 by Vishay Siliconix
Results Overview of SI2303CDS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI2303CDS-T1-E3 Information
SI2303CDS-T1-E3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI2303CDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2303CDS-T1-E3CT-ND
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DigiKey | MOSFET P-CH 30V 2.7A SOT23-3 Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7506 In Stock |
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$0.1383 / $0.6100 | Buy Now |
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DISTI #
70026193
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RS | N-CH MOSFET SO-8 BWL 12V 5.5MOHM @ 4.5V PMW OPT Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.4160 | RFQ |
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Quest Components | 1900 MA, 30 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB | 1652 |
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$0.3780 / $0.9450 | Buy Now |
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New Advantage Corporation | Single P-Channel 30 V 190 mOhms Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 27000 |
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$0.1662 / $0.1800 | Buy Now |
Part Details for SI2303CDS-T1-E3
SI2303CDS-T1-E3 CAD Models
SI2303CDS-T1-E3 Part Data Attributes
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SI2303CDS-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2303CDS-T1-E3
Vishay Siliconix
TRANSISTOR 1900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 25 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2303CDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2303CDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2303CDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2303CDS-T1-GE3 | Vishay Intertechnologies | $0.2044 | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2303CDS-T1-E3 vs SI2303CDS-T1-GE3 |
| SI2303CDS-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 1900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | SI2303CDS-T1-E3 vs SI2303CDS-T1-GE3 |
| SI2303BDS | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | SI2303CDS-T1-E3 vs SI2303BDS |
| SI2303BDS-T1-E3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3 | SI2303CDS-T1-E3 vs SI2303BDS-T1-E3 |
SI2303CDS-T1-E3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI2303CDS-T1-E3 is a 6-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to reduce junction temperatures.
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The maximum allowed voltage on the input pins of the SI2303CDS-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.
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Yes, the SI2303CDS-T1-E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
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To prevent electrostatic discharge (ESD) damage, handle the SI2303CDS-T1-E3 with ESD-protective equipment, such as wrist straps or mats. Ensure that the device is stored in an ESD-protective package or bag when not in use.