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Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI2301CDS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96AJ0103
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Newark | Mosfet, P-Ch, 20V, 3.1A, To-236 Rohs Compliant: Yes |Vishay SI2301CDS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 438000 |
|
$0.1630 | Buy Now |
DISTI #
16P3701
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Newark | P Channel Mosfet, -20V, -3.1A To-236, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:2.5V, Gate Source Threshold Voltage Max:400Mv Rohs Compliant: Yes |Vishay SI2301CDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 441 |
|
$0.1770 / $0.3790 | Buy Now |
DISTI #
79AH6511
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Newark | P-Channel 20-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2301CDS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1330 | Buy Now |
DISTI #
SI2301CDS-T1-GE3
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2301CDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.1118 / $0.1187 | Buy Now |
DISTI #
16P3701
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Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 16P3701) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 1 Days Container: Ammo Pack | 0 |
|
$0.1840 / $0.4790 | Buy Now |
DISTI #
781-SI2301CDS-T1-GE3
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Mouser Electronics | MOSFETs -20V Vds 8V Vgs SOT-23 RoHS: Compliant | 61079 |
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$0.1250 / $0.5000 | Buy Now |
DISTI #
E02:0323_00529682
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Arrow Electronics | Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Date Code: 2509 | Europe - 3000 |
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$0.1246 / $0.1335 | Buy Now |
DISTI #
V72:2272_07431537
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Arrow Electronics | Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2435 Container: Cut Strips | Americas - 1555 |
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$0.1045 / $0.4758 | Buy Now |
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Future Electronics | P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel | 600000Reel |
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$0.0964 / $0.1030 | Buy Now |
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Future Electronics | P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel | 9000Reel |
|
$0.0964 / $0.1030 | Buy Now |
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SI2301CDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2301CDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 0.112 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 55 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2301CDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2301CDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
DMP2123L-7 | Diodes Incorporated | $0.1081 | Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | SI2301CDS-T1-GE3 vs DMP2123L-7 |
SI2301CDS-T1-E3 | Vishay Intertechnologies | $0.1524 | Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2301CDS-T1-GE3 vs SI2301CDS-T1-E3 |
SI2301BDS-T1-E3 | Vishay Intertechnologies | $0.1678 | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2301CDS-T1-GE3 vs SI2301BDS-T1-E3 |
The recommended PCB footprint for the SI2301CDS-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
To ensure proper biasing, connect the VCC pin to a stable 2.5V to 5.5V power supply, and the GND pin to a solid ground plane. Additionally, decouple the VCC pin with a 10nF to 100nF capacitor to reduce noise and ensure stable operation.
The maximum allowable power dissipation for the SI2301CDS-T1-GE3 is 250mW. Ensure that the device is properly heat-sinked and operated within the recommended temperature range to prevent overheating.
To protect the SI2301CDS-T1-GE3 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD-protection diodes or resistors.
The recommended operating temperature range for the SI2301CDS-T1-GE3 is -40°C to 125°C. Operating the device outside this range may affect its performance and reliability.