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Part Details for SI1902DL-T1-GE3 by Vishay Intertechnologies
Results Overview of SI1902DL-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI1902DL-T1-GE3 Information
SI1902DL-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI1902DL-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86R3860
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Newark | Mosfet, Dual N Channel, 20V, 0.66A, Sc-70-6, Full Reel, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:660Ma, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SI1902DL-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
18X0007
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Newark | Mosfet, Dual N Channel, 20V, 0.66A, Sc-70-6, Channel Type:Dual N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:660Ma, No. Of Pins:6Pins, Product Range:- Rohs Compliant: Yes |Vishay SI1902DL-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
SI1902DL-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1902DL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 6000 |
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$0.1260 / $0.1340 | Buy Now |
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DISTI #
78-SI1902DL-T1-GE3
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Mouser Electronics | MOSFETs 20V .66A .27W RoHS: Compliant | 119069 |
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$0.1480 / $0.5800 | Buy Now |
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DISTI #
84913275
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Verical | Trans MOSFET N-CH 20V 0.66A 6-Pin SC-70 T/R RoHS: Compliant Min Qty: 36 Package Multiple: 1 Date Code: 2428 | Americas - 2592 |
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$0.1423 / $0.1872 | Buy Now |
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Bristol Electronics | 1432 |
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RFQ | ||
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DISTI #
SI1902DL-T1-GE3
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TTI | MOSFETs 20V .66A .27W RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 3000 In Stock |
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$0.1820 | Buy Now |
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DISTI #
SI1902DL-T1-GE3
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TME | Transistor: N-MOSFET x2, TrenchFET®, unipolar, 20V, 660mA, Idm: 1A Min Qty: 3 | 0 |
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$0.2300 / $0.3450 | RFQ |
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DISTI #
SI1902DL-T1-GE3
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IBS Electronics | MOSFET ARRAY 2 N-CHANNEL (DUAL) 20V 660MA 270MW SURFACE MOUNT SC-70-6 (SOT-363) Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.1716 / $0.1794 | Buy Now |
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DISTI #
SI1902DL-T1-GE3
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EBV Elektronik | Transistor MOSFET Array Dual NCH 20V 066A 6Pin SC70 TR (Alt: SI1902DL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SI1902DL-T1-GE3
SI1902DL-T1-GE3 CAD Models
SI1902DL-T1-GE3 Part Data Attributes
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SI1902DL-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI1902DL-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.66 A | |
| Drain-source On Resistance-Max | 0.385 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.27 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
SI1902DL-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SI1902DL-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendation for QFN Packages' (document number: 81011).
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The thermal pad on the SI1902DL-T1-GE3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
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The maximum operating temperature range for the SI1902DL-T1-GE3 is -55°C to 150°C. However, the device's performance may degrade at extreme temperatures, and the recommended operating temperature range is -40°C to 125°C.
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Yes, the SI1902DL-T1-GE3 is suitable for high-reliability applications. It is manufactured using a qualified process and is compliant with the Automotive Electronics Council (AEC) Q100 and Q101 standards.
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To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the Vishay Intertechnologies' application note 'Soldering Profile for QFN Packages' (document number: 81012).