Part Details for SI1308EDL-T1-GE3 by Vishay Siliconix
Results Overview of SI1308EDL-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI1308EDL-T1-GE3 Information
SI1308EDL-T1-GE3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI1308EDL-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI1308EDL-T1-GE3CT-ND
|
DigiKey | MOSFET N-CH 30V 1.4A SOT323 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
36130 In Stock |
|
$0.0938 / $0.4500 | Buy Now |
|
DISTI #
70459651
|
RS | Si1308EDL-T1-GE3 N-channel MOSFET Transistor, 1.5 A, 30 V, 3-Pin SC-70 Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.2830 | RFQ |
|
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 78000 |
|
$0.1692 / $0.1833 | Buy Now |
Part Details for SI1308EDL-T1-GE3
SI1308EDL-T1-GE3 CAD Models
SI1308EDL-T1-GE3 Part Data Attributes
|
|
SI1308EDL-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI1308EDL-T1-GE3
Vishay Siliconix
Si1308EDL N-Channel 30 V (D-S) MOSFET
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SC-70 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 0.132 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 11 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI1308EDL-T1-GE3
This table gives cross-reference parts and alternative options found for SI1308EDL-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1308EDL-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSH103,235 | NXP Semiconductors | Check for Price | BSH103 - N-channel TrenchMOS logic level FET TO-236 3-Pin | SI1308EDL-T1-GE3 vs BSH103,235 |
| SI1300BDL-T1-E3 | Vishay Siliconix | Check for Price | TRANSISTOR 400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 3 PIN, FET General Purpose Small Signal | SI1308EDL-T1-GE3 vs SI1300BDL-T1-E3 |
| MMBF0201NLT3 | onsemi | Check for Price | 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN | SI1308EDL-T1-GE3 vs MMBF0201NLT3 |
| MMBF0201NLT1 | onsemi | Check for Price | Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | SI1308EDL-T1-GE3 vs MMBF0201NLT1 |
| SI1304BDL-T1-GE3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 0.85A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN | SI1308EDL-T1-GE3 vs SI1304BDL-T1-GE3 |
| MMBF0201NLT3 | Motorola Mobility LLC | Check for Price | 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | SI1308EDL-T1-GE3 vs MMBF0201NLT3 |
| BSH103T/R | NXP Semiconductors | Check for Price | TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD-3, 3 PIN, FET General Purpose Small Signal | SI1308EDL-T1-GE3 vs BSH103T/R |
| SI1304BDL-T1-E3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 0.85A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 3 PIN | SI1308EDL-T1-GE3 vs SI1304BDL-T1-E3 |
| 934054713215 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | SI1308EDL-T1-GE3 vs 934054713215 |
SI1308EDL-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the SI1308EDL-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.
-
To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
-
The SI1308EDL-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C. However, the device's performance and reliability may degrade at extreme temperatures.
-
Yes, the SI1308EDL-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the specific application requirements.
-
To prevent ESD damage, handle the SI1308EDL-T1-GE3 with an anti-static wrist strap or mat, and ensure the PCB is properly grounded. Avoid touching the device's pins or handling the device in environments with high electrostatic potential.