Part Details for SGS23N60UFDTU by onsemi
Results Overview of SGS23N60UFDTU by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
SGS23N60UFDTU Information
SGS23N60UFDTU by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SGS23N60UFDTU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SGS23N60UFDTU
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Avnet Americas | Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: SGS23N60UFDTU) RoHS: Compliant Min Qty: 807 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 3000 Partner Stock |
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$0.7626 / $0.8370 | Buy Now |
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Future Electronics | SGS23N60UFD Series 600 V 23 A Flange Mount Ultra-Fast IGBT-TO-220F Min Qty: 50 Package Multiple: 50 |
50 null |
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$0.8850 / $0.9800 | Buy Now |
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Flip Electronics | Stock, ship today | 3000 |
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RFQ |
Part Details for SGS23N60UFDTU
SGS23N60UFDTU CAD Models
SGS23N60UFDTU Part Data Attributes
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SGS23N60UFDTU
onsemi
Buy Now
Datasheet
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Compare Parts:
SGS23N60UFDTU
onsemi
600V, PT IGBT, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 23 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 320 ns | |
| Turn-on Time-Nom (ton) | 55 ns |
Alternate Parts for SGS23N60UFDTU
This table gives cross-reference parts and alternative options found for SGS23N60UFDTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGS23N60UFDTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STGD3NB60HD | STMicroelectronics | Check for Price | 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3 | SGS23N60UFDTU vs STGD3NB60HD |
| SGH10N120RUFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGS23N60UFDTU vs SGH10N120RUFD |
| SGS6N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGS23N60UFDTU vs SGS6N60UF |
| SGH5N120RUFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGS23N60UFDTU vs SGH5N120RUFD |
| SGS13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGS23N60UFDTU vs SGS13N60UF |
| SGH15N120RUF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGS23N60UFDTU vs SGH15N120RUF |
| HGT1S7N60C3D | Harris Semiconductor | Check for Price | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA | SGS23N60UFDTU vs HGT1S7N60C3D |
| STGD7NB60K | STMicroelectronics | Check for Price | 14A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252, DPAK-3 | SGS23N60UFDTU vs STGD7NB60K |
| SGS23N60UFD | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220F, 3 PIN | SGS23N60UFDTU vs SGS23N60UFD |
| SGH20N60RUF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | SGS23N60UFDTU vs SGH20N60RUF |
SGS23N60UFDTU Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
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To ensure reliable operation at high temperatures, it is essential to follow the recommended derating curves for the device, ensure good thermal management, and avoid exceeding the maximum junction temperature (Tj) of 175°C.
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The SGS23N60UFDTU has an integrated ESD protection diode, but it is still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
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Yes, the SGS23N60UFDTU is suitable for high-frequency switching applications up to 100kHz. However, it is essential to consider the device's switching losses, gate drive requirements, and layout parasitics to ensure reliable operation.
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When selecting a gate driver for the SGS23N60UFDTU, consider the device's gate charge requirements, the desired switching frequency, and the power supply voltage. A gate driver with a high current capability and a low output impedance is recommended.