Part Details for SFW9Z34TM by Fairchild Semiconductor Corporation
Results Overview of SFW9Z34TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SFW9Z34TM Information
SFW9Z34TM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SFW9Z34TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 18A, 60V, 0.14ohm, P-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 36000 |
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$0.5078 / $0.8190 | Buy Now |
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Vyrian | Transistors | 36273 |
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RFQ |
Part Details for SFW9Z34TM
SFW9Z34TM CAD Models
SFW9Z34TM Part Data Attributes
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SFW9Z34TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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SFW9Z34TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 555 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 82 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SFW9Z34TM
This table gives cross-reference parts and alternative options found for SFW9Z34TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFW9Z34TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD8P06ESM9A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | SFW9Z34TM vs RFD8P06ESM9A |
| SFW9Z14TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | SFW9Z34TM vs SFW9Z14TM |
| RFD8P06ESM9A | Intersil Corporation | Check for Price | 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | SFW9Z34TM vs RFD8P06ESM9A |
| RFD8P05SM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | SFW9Z34TM vs RFD8P05SM |
| SFW9Z24TM | Rochester Electronics LLC | Check for Price | 9.7A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | SFW9Z34TM vs SFW9Z24TM |
| SFW9Z14 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SFW9Z34TM vs SFW9Z14 |
| SFR9014 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SFW9Z34TM vs SFR9014 |
| RFD8P06ESM | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | SFW9Z34TM vs RFD8P06ESM |
| SFW2955 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | SFW9Z34TM vs SFW2955 |
| FQD7P06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | SFW9Z34TM vs FQD7P06 |