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Part Details for SCT3080ALGC11 by ROHM Semiconductor
Results Overview of SCT3080ALGC11 by ROHM Semiconductor
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SCT3080ALGC11 Information
SCT3080ALGC11 by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SCT3080ALGC11
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05AC9464
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Newark | Sic Mosfet, N-Ch, 650V, 30A, To-247N-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:134W Rohs Compliant: Yes |Rohm SCT3080ALGC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 219 |
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$7.8400 / $11.0400 | Buy Now |
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DISTI #
SCT3080ALGC11-ND
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DigiKey | SICFET N-CH 650V 30A TO247N Min Qty: 1 Lead time: 27 Weeks Container: Tube |
977 In Stock |
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$6.2250 / $7.4600 | Buy Now |
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DISTI #
77269364
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Verical | Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube Min Qty: 10 Package Multiple: 1 Date Code: 2301 | Americas - 450 |
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$6.8946 / $8.0565 | Buy Now |
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DISTI #
71287998
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Verical | Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube Min Qty: 10 Package Multiple: 1 Date Code: 2301 | Americas - 216 |
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$8.1340 / $8.8984 | Buy Now |
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DISTI #
83139014
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Verical | Trans MOSFET N-CH SiC 650V 30A 3-Pin(3+Tab) TO-247N Tube Min Qty: 7 Package Multiple: 1 Date Code: 2342 | Americas - 159 |
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$5.8500 / $7.4700 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 985 |
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$5.1750 / $9.0000 | Buy Now |
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Bristol Electronics | 120 |
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RFQ | ||
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Quest Components | 788 |
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$6.3000 / $12.0000 | Buy Now | |
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Quest Components | 532 |
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$7.7670 / $11.6505 | Buy Now | |
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Quest Components | 96 |
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$10.8738 / $13.9806 | Buy Now |
Part Details for SCT3080ALGC11
SCT3080ALGC11 CAD Models
SCT3080ALGC11 Part Data Attributes
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SCT3080ALGC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
SCT3080ALGC11
ROHM Semiconductor
Power Field-Effect Transistor, 30A I(D), 650V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | TO-247N, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 27 Weeks | |
| Date Of Intro | 2017-03-13 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.104 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 265 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for SCT3080ALGC11
This table gives cross-reference parts and alternative options found for SCT3080ALGC11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT3080ALGC11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHH26N60E-T1-GE3 | Vishay Intertechnologies | $3.8647 | Power Field-Effect Transistor, 25A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | SCT3080ALGC11 vs SIHH26N60E-T1-GE3 |
| SIHB33N60ET5-GE3 | Vishay Intertechnologies | $4.8408 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | SCT3080ALGC11 vs SIHB33N60ET5-GE3 |
| SIHG33N60E-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SCT3080ALGC11 vs SIHG33N60E-E3 |
| IPI60R099CPXKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | SCT3080ALGC11 vs IPI60R099CPXKSA1 |
| TK31V60X,LQ | Toshiba America Electronic Components | Check for Price | 30.8A, 600V, 0.098ohm, N-CHANNEL, Si, POWER, MOSFET | SCT3080ALGC11 vs TK31V60X,LQ |
| SIHB33N60E-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | SCT3080ALGC11 vs SIHB33N60E-E3 |
| IPI60R099CPA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | SCT3080ALGC11 vs IPI60R099CPA |
| IPB60R099CPXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SCT3080ALGC11 vs IPB60R099CPXT |
| IPI60R099CPAXK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | SCT3080ALGC11 vs IPI60R099CPAXK |
| IPB65R110CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | SCT3080ALGC11 vs IPB65R110CFD |
SCT3080ALGC11 Frequently Asked Questions (FAQ)
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A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended for optimal thermal performance.
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Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal gradients and thermal stress. Additionally, consider using a thermal interface material to improve heat transfer between the device and the heat sink.
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Handle the device by the body, avoiding touching the leads or pins. Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and use anti-static packaging and handling procedures to prevent ESD damage.
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Use a systematic approach to troubleshoot the issue, checking the power supply, input voltage, and output voltage. Verify that the device is properly soldered and that there are no signs of physical damage. Consult the datasheet and application notes for guidance on troubleshooting common issues.
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Consider using redundant or fault-tolerant designs, and ensure that the device is operated within its recommended specifications. Implement fail-safe mechanisms and error detection and correction mechanisms to ensure reliable operation. Consult industry standards and guidelines for safety-critical applications.