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Part Details for SCT2280KEC by ROHM Semiconductor
Results Overview of SCT2280KEC by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SCT2280KEC Information
SCT2280KEC by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SCT2280KEC
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X0712
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Newark | Mosfet, N Channel, 1.2Kv, 14A, 0R28, To-247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:14A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Product Range:- Rohs Compliant: Yes |Rohm SCT2280KEC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
SCT2280KEC
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Avnet Silica | Trans SiC MOSFET NCH 1200V 14A 3Pin TO247 Tube (Alt: SCT2280KEC) RoHS: Compliant Min Qty: 360 Package Multiple: 360 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Vyrian | Transistors | 1 |
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RFQ |
Part Details for SCT2280KEC
SCT2280KEC CAD Models
SCT2280KEC Part Data Attributes
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SCT2280KEC
ROHM Semiconductor
Buy Now
Datasheet
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SCT2280KEC
ROHM Semiconductor
Power Field-Effect Transistor, 14A I(D), 1200V, 0.364ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.364 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
SCT2280KEC Frequently Asked Questions (FAQ)
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A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are also recommended.
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The SCT2280KEC requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP.
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The maximum allowed power dissipation of the SCT2280KEC is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
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An overvoltage protection (OVP) circuit and an undervoltage lockout (UVLO) circuit are recommended to protect the SCT2280KEC from voltage transients and faults.
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The SCT2280KEC is designed to operate at frequencies up to 100kHz. Operating at higher frequencies may reduce the device's performance and efficiency.