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Transistors / Power Field-Effect Transistors / SCT012W90G3-4AG
Datasheets
SCT012W90G3-4AG by: STMicroelectronics

Part Details for SCT012W90G3-4AG by STMicroelectronics

Results Overview of SCT012W90G3-4AG by STMicroelectronics

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SCT012W90G3-4AG Information

SCT012W90G3-4AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT012W90G3-4AG

Part # Distributor Description Stock Price Buy
DISTI # 16AM9218
Newark Automotive-Grade Silicon Carbide Rohs Compliant: Yes |Stmicroelectronics SCT012W90G3-4AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 30
  • 1 $48.8700
  • 5 $47.6700
  • 10 $46.5200
  • 25 $45.4900
  • 50 $44.5600
  • 100 $44.0200
  • 250 $43.5300
$43.5300 / $48.8700 Buy Now
DISTI # 497-SCT012W90G3-4AG-ND
DigiKey AUTOMOTIVE-GRADE SILICON CARBIDE Min Qty: 1 Lead time: 32 Weeks Container: Tube 100
In Stock
  • 1 $26.6200
  • 30 $20.0333
  • 120 $18.2858
$18.2858 / $26.6200 Buy Now
DISTI # SCT012W90G3-4AG
Avnet Americas HiP247-4L//Automotive Silicon Carbide Power MOSFET 900 V 11.7 m? (typ., TJ = 25 ?C) - Tape and Reel (Alt: SCT012W90G3-4AG) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 32 Weeks, 0 Days Container: Reel 0
  • 600 $17.9201
  • 1,200 $17.8287
  • 2,400 $17.9201
  • 3,600 $17.6458
  • 4,800 $17.5544
$17.5544 / $17.9201 Buy Now
DISTI # 511-SCT012W90G3-4AG
Mouser Electronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package RoHS: Compliant 80
  • 1 $25.3300
  • 10 $22.5100
  • 100 $19.6900
  • 250 $18.3700
$18.3700 / $25.3300 Buy Now
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package RoHS: Compliant Min Qty: 1 80
  • 1 $24.8200
  • 10 $22.0600
  • 25 $22.0500
  • 100 $19.3000
  • 250 $18.2300
  • 500 $18.2300
$18.2300 / $24.8200 Buy Now
Future Electronics Automotive-grade silicon carbide Power MOSFET Min Qty: 1 Package Multiple: 1 30
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  • 1 $17.6600
  • 5 $17.4200
  • 20 $17.2100
  • 50 $17.0800
  • 125 $16.8200
$16.8200 / $17.6600 Buy Now
DISTI # SCT012W90G3-4AG
Avnet Silica HiP2474LAutomotive Silicon Carbide Power MOSFET 900 V 117 m typ TJ 25 C (Alt: SCT012W90G3-4AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 30
Buy Now
DISTI # SCT012W90G3-4AG
EBV Elektronik HiP2474LAutomotive Silicon Carbide Power MOSFET 900 V 117 m typ TJ 25 C (Alt: SCT012W90G3-4AG) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 33 Weeks, 0 Days EBV - 6030
Buy Now

Part Details for SCT012W90G3-4AG

SCT012W90G3-4AG CAD Models

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SCT012W90G3-4AG Part Data Attributes

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SCT012W90G3-4AG STMicroelectronics
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