Part Details for SBSS84LT1G by onsemi
Results Overview of SBSS84LT1G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SBSS84LT1G Information
SBSS84LT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SBSS84LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2845396
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Farnell | MOSFET, P-CH, 50V, 0.13A, SOT-23-3 RoHS: Compliant Min Qty: 5 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 34975 |
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$0.0545 / $0.2631 | Buy Now |
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DISTI #
2845396RL
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Farnell | MOSFET, P-CH, 50V, 0.13A, SOT-23-3 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 34975 |
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$0.0545 / $0.0917 | Buy Now |
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DISTI #
SBSS84LT1GOSCT-ND
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DigiKey | MOSFET P-CH 50V 130MA SOT23-3 Min Qty: 1 Lead time: 99 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
74466 In Stock |
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$0.0545 / $0.3500 | Buy Now |
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Bristol Electronics | 114 |
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RFQ | ||
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Bristol Electronics | 74 |
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RFQ | ||
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ComSIT USA | POWER MOSFET SINGLE P-CHANNEL SOT-23 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
SBSS84LT1G
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Avnet Silica | Trans MOSFET PCH 50V 013A 3Pin SOT23 TR (Alt: SBSS84LT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 5165 |
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$0.2500 / $0.3800 | Buy Now |
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DISTI #
SBSS84LT1G
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EBV Elektronik | Trans MOSFET PCH 50V 013A 3Pin SOT23 TR (Alt: SBSS84LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 3000 |
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RFQ |
Part Details for SBSS84LT1G
SBSS84LT1G CAD Models
SBSS84LT1G Part Data Attributes
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SBSS84LT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
SBSS84LT1G
onsemi
TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 | |
| Package Description | ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 318-08 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.13 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SBSS84LT1G
This table gives cross-reference parts and alternative options found for SBSS84LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SBSS84LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSS84-G | onsemi | Check for Price | Small Signal Field-Effect Transistor | SBSS84LT1G vs BSS84-G |
| BSS84LT3 | Motorola Mobility LLC | Check for Price | 100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN | SBSS84LT1G vs BSS84LT3 |
| BSS84 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Small Signal Field-Effect Transistor | SBSS84LT1G vs BSS84 |
| BSS84/DG | NXP Semiconductors | Check for Price | TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | SBSS84LT1G vs BSS84/DG |
SBSS84LT1G Frequently Asked Questions (FAQ)
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A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, using thermal vias and a solid ground plane can further improve thermal performance.
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To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. Typically, this involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range. Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.
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When paralleling multiple SBSS84LT1G devices, ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Also, consider the current sharing and thermal management between devices. It's essential to follow the recommended layout and thermal management guidelines to ensure optimal performance and prevent thermal runaway.
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To protect the SBSS84LT1G from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure that the protection circuitry is designed to respond quickly to fault conditions.
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The SBSS84LT1G is designed to meet the reliability and lifespan expectations outlined in the datasheet. However, the actual lifespan will depend on various factors such as operating conditions, thermal management, and quality of the PCB assembly. Following the recommended operating conditions and design guidelines can help ensure the device meets its expected lifespan.