Part Details for SBC847BPDW1T3G by onsemi
Results Overview of SBC847BPDW1T3G by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
SBC847BPDW1T3G Information
SBC847BPDW1T3G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SBC847BPDW1T3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28X8359
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Newark | Npn Pnp Bipolar Transistor/ Reel |Onsemi SBC847BPDW1T3G RoHS: Not Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0330 / $0.0460 | Buy Now |
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DISTI #
SBC847BPDW1T3GOSCT-ND
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DigiKey | TRANS NPN/PNP 45V 0.1A SC88/SC70 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13040 In Stock |
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$0.0313 / $0.2700 | Buy Now |
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DISTI #
SBC847BPDW1T3G
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Avnet Americas | Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW - Tape and Reel (Alt: SBC847BPDW1T3G) RoHS: Compliant Min Qty: 20000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.0323 / $0.0352 | Buy Now |
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DISTI #
863-SBC847BPDW1T3G
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Mouser Electronics | Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V RoHS: Compliant | 9740 |
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$0.0340 / $0.2700 | Buy Now |
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Onlinecomponents.com | 100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor RoHS: Compliant | 0 |
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$0.0298 / $0.0343 | Buy Now |
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DISTI #
84429188
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Verical | Trans GP BJT NPN/PNP 45V 0.1A 380mW 6-Pin SC-88 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 201 Package Multiple: 1 | Americas - 20000 |
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$0.0357 | Buy Now |
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Rochester Electronics | BC847BP - Small Signal Bipolar Transistor, 0.1A, 45V, 2-Element, NPN and PNP RoHS: Compliant Status: Active Min Qty: 1 | 10000 |
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$0.0263 / $0.0424 | Buy Now |
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DISTI #
SBC847BPDW1T3G
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TME | Transistor: NPN / PNP, bipolar, complementary pair, 45V, 0.1A Min Qty: 20 | 0 |
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$0.0600 / $0.0930 | RFQ |
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DISTI #
SBC847BPDW1T3G
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Avnet Asia | Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW (Alt: SBC847BPDW1T3G) RoHS: Compliant Min Qty: 20000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days | 0 |
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$0.0294 / $0.0329 | Buy Now |
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DISTI #
SBC847BPDW1T3G
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Avnet Silica | Bipolar Transistor Array Complementary NPN and PNP 45 V 45 V 100 mA 100 mA 380 mW (Alt: SBC847BPDW1T3G) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for SBC847BPDW1T3G
SBC847BPDW1T3G CAD Models
SBC847BPDW1T3G Part Data Attributes
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SBC847BPDW1T3G
onsemi
Buy Now
Datasheet
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Compare Parts:
SBC847BPDW1T3G
onsemi
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | |
| Package Description | SC-88, SC-70, 6 PIN | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 45 V | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 200 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN AND PNP | |
| Power Dissipation-Max (Abs) | 0.38 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.65 V |
SBC847BPDW1T3G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the SBC847BPDW1T3G is -40°C to 125°C.
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To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum ESR of 1 ohm.
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The maximum input voltage that the SBC847BPDW1T3G can handle is 18V.
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The power dissipation of the SBC847BPDW1T3G can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.
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The typical quiescent current of the SBC847BPDW1T3G is 5mA.