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Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SBC846BDW1T1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y9492
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Newark | Trans, Aec-Q101, Npn, 65V, 0.1A, Sot-363, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:65V, Power Dissipation Pd:380Mw, Dc Collector Current:100Ma, Dc Current Gain Hfe:200Hfe, Transistor Case Style:Sot-363, No. Of Rohs Compliant: Yes |Onsemi SBC846BDW1T1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 36340 |
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$0.0770 / $0.2660 | Buy Now |
DISTI #
76T7149
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Newark | Ss Sc88 Dual Np Xstr Gp/ Reel |Onsemi SBC846BDW1T1G RoHS: Not Compliant Min Qty: 30000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0300 | Buy Now |
DISTI #
38AH2221
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Newark | Ss Sc88 Dual Np Xstr Gp Rohs Compliant: Yes |Onsemi SBC846BDW1T1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0300 | Buy Now |
DISTI #
SBC846BDW1T1GOSCT-ND
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DigiKey | TRANS 2NPN 65V 100MA SC88/SC70 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-ReelĀ®, Tape & Reel (TR) |
50479 In Stock |
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$0.0288 / $0.2500 | Buy Now |
DISTI #
SBC846BDW1T1G
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Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 258000 |
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RFQ | |
DISTI #
SBC846BDW1T1G
|
Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
SBC846BDW1T1G
|
Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
SBC846BDW1T1G
|
Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.0260 / $0.0295 | Buy Now |
DISTI #
SBC846BDW1T1G
|
Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.0260 / $0.0295 | Buy Now |
DISTI #
SBC846BDW1T1G
|
Avnet Americas | Bipolar Transistor Array, Dual NPN, 65 V, 100 mA, 380 mW, 200 hFE, 3 Pins, SOT-363 - Tape and Reel (Alt: SBC846BDW1T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.0268 / $0.0295 | Buy Now |
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SBC846BDW1T1G
onsemi
Buy Now
Datasheet
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SBC846BDW1T1G
onsemi
Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL, Automotive Qualified
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | |
Pin Count | 6 | |
Manufacturer Package Code | 419B-02 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 65 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.38 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
The recommended operating temperature range for the SBC846BDW1T1G is -40°C to 125°C.
To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power dissipation.
The maximum allowable power dissipation for the SBC846BDW1T1G is 1.5 W. However, this value may vary depending on the operating conditions and thermal management system used.
To handle ESD protection for the SBC846BDW1T1G, it is recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.
The recommended storage temperature range for the SBC846BDW1T1G is -40°C to 150°C.