Datasheets
S2N7002ET1G by: onsemi

N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified

Part Details for S2N7002ET1G by onsemi

Results Overview of S2N7002ET1G by onsemi

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

S2N7002ET1G Information

S2N7002ET1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for S2N7002ET1G

Part # Distributor Description Stock Price Buy
DISTI # 87AK0585
Newark Small Signal Mosfet 60V 310Ma 2.5 Ohm Single N-Channel Sot-23/ Reel |Onsemi S2N7002ET1G RoHS: Not Compliant Min Qty: 30000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.0550
$0.0550 Buy Now
DISTI # 488-S2N7002ET1GCT-ND
DigiKey SMALL SIGNAL MOSFET 60V 310MA 2. Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.3100
  • 30,000 $0.0387
$0.0387 / $0.3100 Buy Now
DISTI # S2N7002ET1G
Avnet Americas Power MOSFET, N Channel, 60 V, 260 mA, 2.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: S2N7002ET1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 30,000 $0.0340
  • 60,000 $0.0336
  • 120,000 $0.0329
  • 180,000 $0.0324
  • 240,000 $0.0319
$0.0319 / $0.0340 Buy Now
DISTI # 863-S2N7002ET1G
Mouser Electronics MOSFETs NFET SOT23 60V 310MA 2.5O 0
  • 1 $0.3100
  • 10 $0.3040
  • 100 $0.3020
  • 1,000 $0.2830
  • 3,000 $0.1300
  • 9,000 $0.1030
  • 24,000 $0.0380
  • 45,000 $0.0360
  • 99,000 $0.0330
$0.0330 / $0.3100 Order Now
Onlinecomponents.com N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω RoHS: Compliant Alternative Product Available
  • 3,000 $0.0364
  • 6,000 $0.0349
  • 12,000 $0.0344
  • 27,000 $0.0336
  • 51,000 $0.0323
  • 102,000 $0.0315
  • 150,000 $0.0310
  • 252,000 $0.0305
$0.0305 / $0.0364 Buy Now
DISTI # 86154272
Verical Trans MOSFET N-CH 60V 0.26A Automotive AEC-Q101 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 6945 Package Multiple: 1 Date Code: 2201 Americas - 258000
  • 6,945 $0.0540
$0.0540 Buy Now
DISTI # 88175662
Verical Trans MOSFET N-CH 60V 0.26A Automotive AEC-Q101 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 9000 Package Multiple: 9000 Americas - 9000
  • 9,000 $0.0364
$0.0364 Buy Now
Rochester Electronics 2N7002E - Small Signal MOSFET 60 V, 310 mA, Single, NChannel, SOT-23 RoHS: Compliant Status: Active Min Qty: 1 258000
  • 100 $0.0432
  • 500 $0.0389
  • 1,000 $0.0359
  • 10,000 $0.0320
  • 100,000 $0.0268
$0.0268 / $0.0432 Buy Now
DISTI # S2N7002ET1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 30000 0
  • 30,000 $0.0300
$0.0300 Buy Now
DISTI # SMC-S2N7002ET1G
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 42000
RFQ
DISTI # 2N7002ET1G
Avnet Asia Power MOSFET, N Channel, 60 V, 260 mA, 2.5 Ohm, SOT-23, 3 Pins, Surface Mount (Alt: 2N7002ET1G) RoHS: Compliant Min Qty: 60000 Package Multiple: 30000 Lead time: 14 Weeks, 0 Days 60000
  • 60,000 $0.0163
  • 120,000 $0.0152
  • 180,000 $0.0148
  • 300,000 $0.0144
  • 600,000 $0.0141
  • 1,500,000 $0.0137
  • 3,000,000 $0.0134
$0.0134 / $0.0163 Buy Now
DISTI # S2N7002ET1G
Avnet Silica (Alt: S2N7002ET1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days Silica - 0
Buy Now
DISTI # S2N7002ET1G
EBV Elektronik (Alt: S2N7002ET1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω RoHS: Compliant Alternative Product Available
  • 3,000 $0.0364
  • 6,000 $0.0349
  • 12,000 $0.0344
  • 27,000 $0.0336
  • 51,000 $0.0323
  • 102,000 $0.0315
  • 150,000 $0.0310
  • 252,000 $0.0305
$0.0305 / $0.0364 Buy Now
Vyrian Transistors 117902
RFQ

Part Details for S2N7002ET1G

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S2N7002ET1G Part Data Attributes

S2N7002ET1G onsemi
Buy Now Datasheet
Compare Parts:
S2N7002ET1G onsemi N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Date Of Intro 2019-06-10
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.26 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

S2N7002ET1G Frequently Asked Questions (FAQ)

  • A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal via array under the package is recommended. The thermal pad should be connected to a solid ground plane to dissipate heat efficiently.

  • The device requires a stable input voltage (VIN) and a proper biasing of the gate-source voltage (VGS) to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a resistive divider network can be used to set the gate-source voltage.

  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by excessive voltage or current. Handle the device by the body, avoid touching the pins, and use an ESD wrist strap or mat to prevent damage. Also, avoid bending or flexing the leads to prevent mechanical damage.

  • The maximum operating frequency depends on the specific application and the device's switching characteristics. The datasheet provides a graph of the device's switching frequency vs. drain-source voltage. Use this graph to determine the maximum operating frequency for your application.

  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate-source voltage is properly biased. Also, ensure that the devices are properly thermally coupled to prevent thermal runaway. Finally, ensure that the devices are properly synchronized to prevent shoot-through currents.

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