Part Details for S2N7002ET1G by onsemi
Results Overview of S2N7002ET1G by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S2N7002ET1G Information
S2N7002ET1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for S2N7002ET1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AK0585
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Newark | Small Signal Mosfet 60V 310Ma 2.5 Ohm Single N-Channel Sot-23/ Reel |Onsemi S2N7002ET1G RoHS: Not Compliant Min Qty: 30000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0550 | Buy Now |
DISTI #
488-S2N7002ET1GCT-ND
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DigiKey | SMALL SIGNAL MOSFET 60V 310MA 2. Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0387 / $0.3100 | Buy Now |
DISTI #
S2N7002ET1G
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Avnet Americas | Power MOSFET, N Channel, 60 V, 260 mA, 2.5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: S2N7002ET1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.0319 / $0.0340 | Buy Now |
DISTI #
863-S2N7002ET1G
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Mouser Electronics | MOSFETs NFET SOT23 60V 310MA 2.5O | 0 |
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$0.0330 / $0.3100 | Order Now |
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Onlinecomponents.com | N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω RoHS: Compliant | Alternative Product Available |
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$0.0305 / $0.0364 | Buy Now |
DISTI #
86154272
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Verical | Trans MOSFET N-CH 60V 0.26A Automotive AEC-Q101 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 6945 Package Multiple: 1 Date Code: 2201 | Americas - 258000 |
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$0.0540 | Buy Now |
DISTI #
88175662
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Verical | Trans MOSFET N-CH 60V 0.26A Automotive AEC-Q101 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 9000 Package Multiple: 9000 | Americas - 9000 |
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$0.0364 | Buy Now |
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Rochester Electronics | 2N7002E - Small Signal MOSFET 60 V, 310 mA, Single, NChannel, SOT-23 RoHS: Compliant Status: Active Min Qty: 1 | 258000 |
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$0.0268 / $0.0432 | Buy Now |
DISTI #
S2N7002ET1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 30000 | 0 |
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$0.0300 | Buy Now |
DISTI #
SMC-S2N7002ET1G
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 42000 |
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RFQ |
Part Details for S2N7002ET1G
S2N7002ET1G CAD Models
S2N7002ET1G Part Data Attributes
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S2N7002ET1G
onsemi
Buy Now
Datasheet
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Compare Parts:
S2N7002ET1G
onsemi
N-Channel Small Signal MOSFET 60V, 310mA, 2.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOT-23 (TO-236) 3 LEAD | |
Pin Count | 3 | |
Manufacturer Package Code | 318 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Date Of Intro | 2019-06-10 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.26 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
S2N7002ET1G Frequently Asked Questions (FAQ)
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A thermal pad is recommended under the package to improve thermal performance. A minimum of 2oz copper thickness and a thermal via array under the package is recommended. The thermal pad should be connected to a solid ground plane to dissipate heat efficiently.
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The device requires a stable input voltage (VIN) and a proper biasing of the gate-source voltage (VGS) to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a resistive divider network can be used to set the gate-source voltage.
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The device is sensitive to electrostatic discharge (ESD) and can be damaged by excessive voltage or current. Handle the device by the body, avoid touching the pins, and use an ESD wrist strap or mat to prevent damage. Also, avoid bending or flexing the leads to prevent mechanical damage.
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The maximum operating frequency depends on the specific application and the device's switching characteristics. The datasheet provides a graph of the device's switching frequency vs. drain-source voltage. Use this graph to determine the maximum operating frequency for your application.
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When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate-source voltage is properly biased. Also, ensure that the devices are properly thermally coupled to prevent thermal runaway. Finally, ensure that the devices are properly synchronized to prevent shoot-through currents.