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Flash, 32MX16, 100ns, PBGA64,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
S29GL512T10FHI013 by Infineon Technologies AG is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
62AK6001
|
Newark | Flash Memory, 512Mbit, -40 To 85Deg C Rohs Compliant: Yes |Infineon S29GL512T10FHI013 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$7.5800 / $9.8600 | Buy Now |
DISTI #
448-S29GL512T10FHI013CT-ND
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DigiKey | IC FLASH 512MBIT PARALLEL 64FBGA Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2200 In Stock |
|
$6.6875 / $9.8500 | Buy Now |
DISTI #
S29GL512T10FHI013
|
Avnet Americas | NOR Flash 512Mbit 32M X 16Bit/64M X 8Bit Parallel 100ns 64-Pin FBGA - Tape and Reel (Alt: S29GL512T10FHI013) RoHS: Compliant Min Qty: 1600 Package Multiple: 1600 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$6.4731 / $6.9014 | Buy Now |
DISTI #
727-S29GL512T10FH013
|
Mouser Electronics | NOR Flash PNOR RoHS: Compliant | 3065 |
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$6.5200 / $9.7700 | Buy Now |
DISTI #
V79:2366_30299656
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Arrow Electronics | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2331 | Americas - 6400 |
|
$6.3890 / $9.3950 | Buy Now |
DISTI #
87191628
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Verical | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2331 | Americas - 6400 |
|
$6.3890 / $9.3950 | Buy Now |
DISTI #
75724346
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Verical | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA T/R RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2316 | Americas - 140 |
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$9.4500 / $9.6800 | Buy Now |
DISTI #
S29GL512T10FHI013
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 140 |
|
$8.6900 / $9.6800 | Buy Now |
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S29GL512T10FHI013
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
S29GL512T10FHI013
Infineon Technologies AG
Flash, 32MX16, 100ns, PBGA64,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Access Time-Max | 100 ns | |
Alternate Memory Width | 8 | |
Boot Block | BOTTOM/TOP | |
JESD-30 Code | R-PBGA-B64 | |
JESD-609 Code | e1 | |
Length | 13 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 64 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 32MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Programming Voltage | 2.7 V | |
Seated Height-Max | 1.4 mm | |
Supply Current-Max | 0.06 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Type | NOR TYPE | |
Width | 11 mm |
The maximum operating temperature range for the S29GL512T10FHI013 is -40°C to +85°C.
The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
The WP# signal is used to prevent accidental writes to the device. When WP# is asserted low, the device will ignore any write commands and protect the contents of the memory.
The S29GL512T10FHI013 is a 512 Mbit (64 Mbyte) flash memory device, organized as 8192 blocks of 64 Kbits each. The device density and organization can be determined by reading the device ID and querying the block protection status.
The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The device should be in a reset state (RST# asserted low) during power-up.