Part Details for S29GL512T10FHI013 by Cypress Semiconductor
Results Overview of S29GL512T10FHI013 by Cypress Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S29GL512T10FHI013 Information
S29GL512T10FHI013 by Cypress Semiconductor is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29GL512T10FHI013
| Part # | Distributor | Description | Stock | Price | Buy | |
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Flip Electronics | Stock | 13789 |
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RFQ |
Part Details for S29GL512T10FHI013
S29GL512T10FHI013 CAD Models
S29GL512T10FHI013 Part Data Attributes
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S29GL512T10FHI013
Cypress Semiconductor
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Datasheet
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S29GL512T10FHI013
Cypress Semiconductor
Flash, 32MX16, 100ns, PBGA64, FBGA-64
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.1.A | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 100 ns | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM/TOP | |
| JESD-30 Code | R-PBGA-B64 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 64 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 2.7 V | |
| Seated Height-Max | 1.4 mm | |
| Supply Current-Max | 0.06 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Type | NOR TYPE | |
| Width | 11 mm |
S29GL512T10FHI013 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the S29GL512T10FHI013 is -40°C to +85°C.
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The hold signal (HOLD#) should be asserted low to pause the current operation and de-asserted high to resume the operation.
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The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is low, the device is in write-protect mode, and when WP# is high, the device is in normal operation mode.
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To perform a sector erase operation, send the erase command (0x60) followed by the sector address. The device will then erase the specified sector.
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The recommended power-up sequence is to apply VCC first, followed by VPP, and then the clock signal (CLK).