Part Details for S29GL512S11FHIV10 by Infineon Technologies AG
Results Overview of S29GL512S11FHIV10 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
S29GL512S11FHIV10 Information
S29GL512S11FHIV10 by Infineon Technologies AG is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29GL512S11FHIV10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
448-S29GL512S11FHIV10-ND
|
DigiKey | IC FLASH 512MBIT PARALLEL 64FBGA Min Qty: 900 Lead time: 10 Weeks Container: Tray | Temporarily Out of Stock |
|
$7.6225 | Buy Now |
|
DISTI #
S29GL512S11FHIV10
|
Avnet Americas | NOR Flash Parallel 3V/3.3V 512Mbit 32M x 16bit 110ns 64-Pin FBGA Tray - Trays (Alt: S29GL512S11FHIV10) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tray | 20 |
|
$6.3500 / $6.7564 | Buy Now |
|
DISTI #
727-S29GL512S11FHIV1
|
Mouser Electronics | NOR Flash PNOR RoHS: Compliant | 0 |
|
$6.9400 | Order Now |
|
DISTI #
86130147
|
Verical | NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 64-Pin Fortified BGA Tray RoHS: Compliant Min Qty: 45 Package Multiple: 1 Date Code: 2101 | Americas - 101 |
|
$6.6750 / $8.3375 | Buy Now |
|
|
Rochester Electronics | S29GL512S - 512-Mbit (64 Mbyte), 3.0V, GL-S Flash Memory RoHS: Compliant Status: Active Min Qty: 1 | 101 |
|
$5.3400 / $6.6700 | Buy Now |
Part Details for S29GL512S11FHIV10
S29GL512S11FHIV10 CAD Models
S29GL512S11FHIV10 Part Data Attributes
|
|
S29GL512S11FHIV10
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
S29GL512S11FHIV10
Infineon Technologies AG
Flash, 64MX8, 110ns, PBGA64,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FBGA-64 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Access Time-Max | 110 ns | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| Data Retention Time-Min | 20 | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-PBGA-B64 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 512 | |
| Number of Terminals | 64 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA64,8X8,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Page Size | 16 words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.4 mm | |
| Sector Size | 64K | |
| Standby Current-Max | 0.0001 A | |
| Supply Current-Max | 0.1 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 11 mm |
Alternate Parts for S29GL512S11FHIV10
This table gives cross-reference parts and alternative options found for S29GL512S11FHIV10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S29GL512S11FHIV10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| S29GL512S11FHIV10 | Cypress Semiconductor | Check for Price | EEPROM Card, 32MX16, 110ns, Parallel, CMOS, PBGA64, FBGA-64 | S29GL512S11FHIV10 vs S29GL512S11FHIV10 |
S29GL512S11FHIV10 Frequently Asked Questions (FAQ)
-
The S29GL512S11FHIV10 has an operating temperature range of -40°C to +125°C.
-
The HOLD# signal should be asserted low to pause the current operation and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
-
The WP# signal is used to protect the entire memory array or specific sectors from being written. When WP# is asserted low, the device will ignore any write operations.
-
The S29GL512S11FHIV10 is a 512 Mbit (64 M x 8) flash memory device, organized as 64 blocks of 8,192 bytes each.
-
The typical programming time for the S29GL512S11FHIV10 is 10-15 seconds for a full chip erase, and 2-5 milliseconds for a single byte or word program operation.