Part Details for S29GL512S11FHIV10 by Cypress Semiconductor
Results Overview of S29GL512S11FHIV10 by Cypress Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S29GL512S11FHIV10 Information
S29GL512S11FHIV10 by Cypress Semiconductor is an EEPROM.
EEPROMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29GL512S11FHIV10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86038611
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Verical | NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 64-Pin Fortified BGA Tray RoHS: Compliant Min Qty: 45 Package Multiple: 1 Date Code: 1701 | Americas - 485 |
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$6.6750 / $8.3375 | Buy Now |
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Rochester Electronics | S29GL512S - 512-Mbit (64 Mbyte), 3.0V, GL-S Flash Memory RoHS: Compliant Status: Active Min Qty: 1 | 485 |
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$5.3400 / $6.6700 | Buy Now |
Part Details for S29GL512S11FHIV10
S29GL512S11FHIV10 CAD Models
S29GL512S11FHIV10 Part Data Attributes
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S29GL512S11FHIV10
Cypress Semiconductor
Buy Now
Datasheet
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S29GL512S11FHIV10
Cypress Semiconductor
EEPROM Card, 32MX16, 110ns, Parallel, CMOS, PBGA64, FBGA-64
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.1.A | |
| HTS Code | 8542.32.00.51 | |
| JESD-609 Code | e1 | |
| Memory IC Type | EEPROM CARD | |
| Moisture Sensitivity Level | 3 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
S29GL512S11FHIV10 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the S29GL512S11FHIV10 is -40°C to +85°C.
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The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation.
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The WP# pin is used to prevent accidental writes to the device. When WP# is low, the device is write-protected, and when it's high, the device is writable.
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The S29GL512S11FHIV10 is a 512 Mbit (64 M x 8) flash memory device, organized as 64 blocks of 8,192 bytes each.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal.