Part Details for S29GL256P11FFIV13 by Cypress Semiconductor
Results Overview of S29GL256P11FFIV13 by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S29GL256P11FFIV13 Information
S29GL256P11FFIV13 by Cypress Semiconductor is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for S29GL256P11FFIV13
S29GL256P11FFIV13 CAD Models
S29GL256P11FFIV13 Part Data Attributes
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S29GL256P11FFIV13
Cypress Semiconductor
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Datasheet
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S29GL256P11FFIV13
Cypress Semiconductor
Flash, 256MX1, 110ns, PBGA64, FBGA-64
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Package Description | FBGA-64 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.1.A | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 110 ns | |
| Alternate Memory Width | 1 | |
| Boot Block | BOTTOM/TOP | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| JESD-30 Code | R-PBGA-B64 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 256 | |
| Number of Terminals | 64 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA64,8X8,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Page Size | 8/16 words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.4 mm | |
| Sector Size | 128K | |
| Standby Current-Max | 0.000005 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 11 mm |
Alternate Parts for S29GL256P11FFIV13
This table gives cross-reference parts and alternative options found for S29GL256P11FFIV13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S29GL256P11FFIV13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
S29GL256P11FFIV13 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the S29GL256P11FFIV13 is -40°C to +85°C.
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The HOLD# signal should be asserted low to suspend the current read or write operation, and de-asserted high to resume the operation.
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The WP# signal is used to prevent accidental writes to the device. When WP# is asserted low, the device is write-protected, and when it is de-asserted high, the device is writable.
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The S29GL256P11FFIV13 is a 256Mbit flash memory device, organized as 16M x 16 bits or 8M x 32 bits.
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The typical programming time for the S29GL256P11FFIV13 is 10-15 seconds for a full chip erase, and 10-20 microseconds for a single byte or word program operation.