Part Details for S29GL01GT11DHIV10 by Infineon Technologies AG
Results Overview of S29GL01GT11DHIV10 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S29GL01GT11DHIV10 Information
S29GL01GT11DHIV10 by Infineon Technologies AG is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29GL01GT11DHIV10
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
S29GL01GT11DHIV10-ND
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DigiKey | IC FLASH 1GBIT PARALLEL 64FBGA Min Qty: 520 Lead time: 10 Weeks Container: Tray | Temporarily Out of Stock |
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$11.6722 | Buy Now |
DISTI #
727-S29GL01GT11DHIV1
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Mouser Electronics | NOR Flash NOR RoHS: Compliant | 662 |
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$11.3500 / $17.0100 | Buy Now |
DISTI #
SP005664753
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EBV Elektronik | (Alt: SP005664753) RoHS: Compliant Min Qty: 520 Package Multiple: 520 Lead time: 11 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for S29GL01GT11DHIV10
S29GL01GT11DHIV10 CAD Models
S29GL01GT11DHIV10 Part Data Attributes
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S29GL01GT11DHIV10
Infineon Technologies AG
Buy Now
Datasheet
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S29GL01GT11DHIV10
Infineon Technologies AG
Flash, 64MX16, 110ns, PBGA64,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | Infineon | |
Access Time-Max | 110 ns | |
Boot Block | BOTTOM/TOP | |
JESD-30 Code | S-PBGA-B64 | |
Length | 9 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | FLASH | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 64 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 64MX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Programming Voltage | 2.7 V | |
Seated Height-Max | 1.4 mm | |
Supply Current-Max | 0.06 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Type | NOR TYPE | |
Width | 9 mm |
S29GL01GT11DHIV10 Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the S29GL01GT11DHIV10 is 2.7V to 3.6V.
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The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation from where it was paused.
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The WP# signal is used to protect the entire memory array or specific sectors from being written. When WP# is asserted low, the corresponding sectors or entire memory array are write-protected.
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The S29GL01GT11DHIV10 is a 1Gb (128MB) flash memory device, organized as 2048 blocks of 64KB each, with 128 pages per block, and 528 bytes per page.
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The S29GL01GT11DHIV10 supports up to 100,000 erase cycles per block.