Part Details for S29AL008J55BFIR23 by Cypress Semiconductor
Results Overview of S29AL008J55BFIR23 by Cypress Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
S29AL008J55BFIR23 Information
S29AL008J55BFIR23 by Cypress Semiconductor is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for S29AL008J55BFIR23
| Part # | Distributor | Description | Stock | Price | Buy | |
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Flip Electronics | Stock, ship today | 1128 |
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RFQ |
Part Details for S29AL008J55BFIR23
S29AL008J55BFIR23 CAD Models
S29AL008J55BFIR23 Part Data Attributes
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S29AL008J55BFIR23
Cypress Semiconductor
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Datasheet
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S29AL008J55BFIR23
Cypress Semiconductor
Flash, 512KX16, 55ns, PBGA48, FPBGA-48
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 55 ns | |
| Additional Feature | BOTTOM BOOT BLOCK | |
| Alternate Memory Width | 8 | |
| Boot Block | BOTTOM | |
| Command User Interface | YES | |
| Common Flash Interface | YES | |
| Data Polling | YES | |
| Data Retention Time-Min | 20 | |
| Endurance | 1000000 Write/Erase Cycles | |
| JESD-30 Code | R-PBGA-B48 | |
| JESD-609 Code | e1 | |
| Length | 8.15 mm | |
| Memory Density | 8388608 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 1,2,1,15 | |
| Number of Terminals | 48 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512KX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA48,6X8,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 3 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Reverse Pinout | NO | |
| Seated Height-Max | 1 mm | |
| Sector Size | 8K,4K,16K,32K | |
| Standby Current-Max | 0.000005 A | |
| Supply Current-Max | 0.012 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Toggle Bit | YES | |
| Type | NOR TYPE | |
| Width | 6.15 mm | |
| Write Cycle Time-Max (tWC) | 0.000055 ms | |
| Write Protection | HARDWARE/SOFTWARE |
Alternate Parts for S29AL008J55BFIR23
This table gives cross-reference parts and alternative options found for S29AL008J55BFIR23. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of S29AL008J55BFIR23, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HY29LV800BF-55 | SK Hynix Inc | Check for Price | Flash, 512KX16, 55ns, PBGA48, 6 X 8 MM, FBGA-48 | S29AL008J55BFIR23 vs HY29LV800BF-55 |
| S29AL008D55BFIR22 | Spansion | Check for Price | Flash, 512KX16, 55ns, PBGA48, 8.15 X 6.15 MM, LEAD FREE, FBGA-48 | S29AL008J55BFIR23 vs S29AL008D55BFIR22 |
| S29AL008D55BFIR20 | Spansion | Check for Price | Flash, 512KX16, 55ns, PBGA48, 8.15 X 6.15 MM, LEAD FREE, FBGA-48 | S29AL008J55BFIR23 vs S29AL008D55BFIR20 |
| M29W800FB55ZA3E | Numonyx Memory Solutions | Check for Price | Flash, 512KX16, 55ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | S29AL008J55BFIR23 vs M29W800FB55ZA3E |
| M29W800FB55ZA3F | Numonyx Memory Solutions | Check for Price | Flash, 512KX16, 55ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48 | S29AL008J55BFIR23 vs M29W800FB55ZA3F |
| M29W800DXB55ZA6T | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 55ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, TFBGA-48 | S29AL008J55BFIR23 vs M29W800DXB55ZA6T |
| M29W800FB5AZA6T | Numonyx Memory Solutions | Check for Price | Flash, 512KX16, 55ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 | S29AL008J55BFIR23 vs M29W800FB5AZA6T |
| S29AL008J55BFIR20 | Infineon Technologies AG | Check for Price | Flash, 512KX16, 55ns, PBGA48, | S29AL008J55BFIR23 vs S29AL008J55BFIR20 |
| M29W800DXB55ZA1T | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 55ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, TFBGA-48 | S29AL008J55BFIR23 vs M29W800DXB55ZA1T |
| M29W800DXB55ZA1F | STMicroelectronics | Check for Price | 512KX16 FLASH 3V PROM, 55ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-48 | S29AL008J55BFIR23 vs M29W800DXB55ZA1F |
S29AL008J55BFIR23 Frequently Asked Questions (FAQ)
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The S29AL008J55BFIR23 has an industrial temperature range of -40°C to +85°C.
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The HOLD# signal should be asserted low to pause the current operation, and de-asserted high to resume the operation. Note that HOLD# should not be asserted during a write operation, as it may cause data corruption.
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The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures proper device initialization and prevents latch-up conditions.
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The S29AL008J55BFIR23 is an 8Mb (1M x 8) flash memory device, organized as 1,048,576 words of 8 bits each.
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The WP# signal is used to protect the entire device or specific sectors from write operations. When WP# is asserted low, the device or selected sectors are write-protected.