Part Details for S-LBC847BDW1T1G by LRC Leshan Radio Co Ltd
Results Overview of S-LBC847BDW1T1G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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S-LBC847BDW1T1G Information
S-LBC847BDW1T1G by LRC Leshan Radio Co Ltd is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
74AC11000DR | Texas Instruments | Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 | |
74AC11008PWR | Texas Instruments | Quadruple 2-Input Positive-AND Gates 16-TSSOP -40 to 85 | |
74AC11138N | Texas Instruments | 3-Line to 8-Line Decoders/Demultiplexers 16-PDIP -40 to 85 |
Price & Stock for S-LBC847BDW1T1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
S-LBC847BDW1T1G
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Avnet Asia | Transistor BJT Array Dual NPN 100mA 6-Pin SOT-363 T/R (Alt: S-LBC847BDW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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RFQ |
Part Details for S-LBC847BDW1T1G
S-LBC847BDW1T1G CAD Models
S-LBC847BDW1T1G Part Data Attributes
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S-LBC847BDW1T1G
LRC Leshan Radio Co Ltd
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Datasheet
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S-LBC847BDW1T1G
LRC Leshan Radio Co Ltd
Small Signal Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LESHAN RADIO CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 4.5 pF | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.38 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
VCEsat-Max | 0.6 V |
S-LBC847BDW1T1G Frequently Asked Questions (FAQ)
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The operating temperature range of the S-LBC847BDW1T1G module is -40°C to 85°C.
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The maximum transmission power of the S-LBC847BDW1T1G module is 20 dBm (100 mW).
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Yes, the S-LBC847BDW1T1G module supports Bluetooth Low Energy (BLE) mode, also known as Bluetooth 4.0.
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The typical current consumption of the S-LBC847BDW1T1G module in sleep mode is around 1.5 μA.
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Yes, the S-LBC847BDW1T1G module has been certified by the FCC (Part 15.247) and CE (EN 300 328 and EN 301 489-1), making it suitable for use in designs that require these certifications.