Part Details for RURD4120S9A_F085 by onsemi
Results Overview of RURD4120S9A_F085 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
RURD4120S9A_F085 Information
RURD4120S9A_F085 by onsemi is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for RURD4120S9A_F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RURD4120S9A-F085
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Avnet Asia | Diode Switching 1.2KV 4A 3-Pin(2+Tab) TO-252 T/R (Alt: RURD4120S9A-F085) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | 0 |
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$0.3932 / $0.4397 | Buy Now |
Part Details for RURD4120S9A_F085
RURD4120S9A_F085 CAD Models
RURD4120S9A_F085 Part Data Attributes
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RURD4120S9A_F085
onsemi
Buy Now
Datasheet
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RURD4120S9A_F085
onsemi
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 1200V V(RRM), Silicon, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FREEWHEELING DIODE | |
| Application | ULTRA FAST SOFT RECOVERY | |
| Case Connection | CATHODE | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 2.1 V | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Pk Forward Current-Max | 40 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 4 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power Dissipation-Max | 50 W | |
| Reference Standard | AEC-Q101 | |
| Rep Pk Reverse Voltage-Max | 1200 V | |
| Reverse Current-Max | 100 µA | |
| Reverse Recovery Time-Max | 0.09 µs | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
RURD4120S9A_F085 Frequently Asked Questions (FAQ)
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The recommended gate resistor value is typically between 10Ω to 20Ω, depending on the specific application and switching frequency.
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To ensure SOA, follow the guidelines in the datasheet for voltage and current limits, and consider using a gate driver with built-in SOA protection.
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The maximum allowed dv/dt is typically around 5-10 kV/μs, but this can vary depending on the specific application and layout. Consult the datasheet and application notes for more information.
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Yes, but it's crucial to ensure that the IGBTs are matched in terms of threshold voltage and current handling capabilities. Additionally, a master-slave configuration with a single gate driver is recommended.
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A good PCB layout should minimize parasitic inductance and ensure a low-impedance path for the gate drive signal. Use a 2-layer or 4-layer board with a solid ground plane and keep the gate drive signal traces short and wide.