Part Details for RS3E075ATTB by ROHM Semiconductor
Results Overview of RS3E075ATTB by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
RS3E075ATTB Information
RS3E075ATTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS3E075ATTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS3E075ATTBCT-ND
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DigiKey | MOSFET P-CH 30V 8SOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4829 In Stock |
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$0.2875 / $0.6400 | Buy Now |
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DISTI #
755-RS3E075ATTB
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Mouser Electronics | MOSFETs Pch -30V -7.5A Middle Power RoHS: Compliant | 7824 |
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$0.2870 / $0.6100 | Buy Now |
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DISTI #
77686335
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Verical | Trans MOSFET P-CH 30V 7.5A 8-Pin SOP T/R RoHS: Compliant Min Qty: 197 Package Multiple: 1 Date Code: 2301 | Americas - 2230 |
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$0.3727 / $0.4164 | Buy Now |
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DISTI #
63039796
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Verical | Trans MOSFET P-CH 30V 7.5A 8-Pin SOP T/R RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 2201 | Americas - 30 |
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$2.5124 | Buy Now |
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Quest Components | 1890 |
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$0.3850 / $1.1000 | Buy Now | |
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DISTI #
RS3E075ATTB
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TME | Transistor: P-MOSFET, unipolar, -30V, -7.5A, Idm: -30A, 2W, SOP8 Min Qty: 1 | 0 |
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$0.2630 / $0.8240 | RFQ |
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DISTI #
RS3E075ATTB
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Avnet Silica | Trans MOSFET P 30V 75A 8Pin SOP Emboss TR (Alt: RS3E075ATTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for RS3E075ATTB
RS3E075ATTB CAD Models
RS3E075ATTB Part Data Attributes
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RS3E075ATTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS3E075ATTB
ROHM Semiconductor
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 4.2 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 7.5 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RS3E075ATTB
This table gives cross-reference parts and alternative options found for RS3E075ATTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS3E075ATTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| ELM34407AA-N | ELM Technology Corp | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | RS3E075ATTB vs ELM34407AA-N |
| IRF7726PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | RS3E075ATTB vs IRF7726PBF |
| AP4433GM-HF | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 7.4 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power | RS3E075ATTB vs AP4433GM-HF |
| UT4411G-S08-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8 | RS3E075ATTB vs UT4411G-S08-T |
| IRF7726PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | RS3E075ATTB vs IRF7726PBF |
| CHM3301JGP | CHENMKO Enterprise Co Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, SMALL FLAT, SOP-8 | RS3E075ATTB vs CHM3301JGP |
RS3E075ATTB Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
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Handle the device in an ESD-controlled environment, wear an ESD strap, and use ESD-safe tools and materials to prevent damage. Avoid touching the device pins or exposing it to static electricity.
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The device is rated for operation up to 125°C, but derating is required for temperatures above 85°C. Ensure proper heat sinking and thermal management to prevent overheating.
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Use a logic analyzer or oscilloscope to monitor the device's inputs and outputs. Check the power supply, biasing, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.