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Part Details for RS1G300GNTB by ROHM Semiconductor
Results Overview of RS1G300GNTB by ROHM Semiconductor
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
RS1G300GNTB Information
RS1G300GNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS1G300GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS1G300GNTBCT-ND
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DigiKey | MOSFET N-CH 40V 30A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16359 In Stock |
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$0.7987 / $2.4600 | Buy Now |
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DISTI #
755-RS1G300GNTB
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Mouser Electronics | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant | 649 |
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$0.8150 / $2.4100 | Buy Now |
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Future Electronics | 40V, 80A, 2.4MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 2500Reel |
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$0.9800 | Buy Now |
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DISTI #
87817906
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Verical | Trans MOSFET N-CH 40V 30A 8-Pin HSOP EP T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2320 | Americas - 2500 |
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$1.6752 | Buy Now |
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DISTI #
61324668
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Verical | Trans MOSFET N-CH 40V 30A 8-Pin HSOP EP T/R RoHS: Compliant Min Qty: 82 Package Multiple: 1 Date Code: 2201 | Americas - 2331 |
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$0.8916 / $1.0427 | Buy Now |
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DISTI #
60174396
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Verical | Trans MOSFET N-CH 40V 30A 8-Pin HSOP EP T/R RoHS: Compliant Min Qty: 82 Package Multiple: 1 Date Code: 2101 | Americas - 2124 |
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$0.8540 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 40V, 0.003OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 3564 |
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$0.8445 / $2.2520 | Buy Now |
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Future Electronics | 40V, 80A, 2.4MOHM, N-CHANNEL, HSOP8 Min Qty: 2500 Package Multiple: 2500 |
2500 null |
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$0.9250 | Buy Now |
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DISTI #
SMC-RS1G300GNTB
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 6484 |
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RFQ | |
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DISTI #
RS1G300GNTB
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Avnet Silica | Trans MOSFET NCH 40V 30A 8Pin HSOP Embossed Tape and Reel (Alt: RS1G300GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for RS1G300GNTB
RS1G300GNTB CAD Models
RS1G300GNTB Part Data Attributes
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RS1G300GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1G300GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 30A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 136 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
RS1G300GNTB Frequently Asked Questions (FAQ)
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A thermal pad is recommended under the IC to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are also recommended.
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Ensure that the input voltage is within the recommended range, and that the device is properly decoupled with a 10uF capacitor. Also, ensure that the device is operated within the recommended junction temperature range.
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The maximum allowable power dissipation is 1.5W. However, this value may vary depending on the ambient temperature and PCB layout. It's recommended to perform thermal simulations to determine the maximum allowable power dissipation for your specific application.
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Yes, the RS1G300GNTB is qualified to AEC-Q100, which makes it suitable for high-reliability applications such as automotive systems. However, it's recommended to consult with ROHM Semiconductor for specific requirements and testing.
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Use ESD protection devices such as TVS diodes or ESD arrays on the input lines. Also, ensure that the device is operated within the recommended voltage range, and consider using overvoltage protection devices such as voltage regulators or overvoltage protection ICs.