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Part Details for RS1G260MNTB by ROHM Semiconductor
Results Overview of RS1G260MNTB by ROHM Semiconductor
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RS1G260MNTB Information
RS1G260MNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS1G260MNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS1G260MNTBCT-ND
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DigiKey | MOSFET N-CH 40V 26A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2288 In Stock |
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$0.8025 / $1.9500 | Buy Now |
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DISTI #
RS1G260MNTB
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Avnet Americas | Power MOSFET, N Channel, 40 V, 80 A, 3.3 Milliohms, HSOP, 8 Pins, Surface Mount - Tape and Reel (Alt: RS1G260MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel | 190000 |
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RFQ | |
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DISTI #
755-RS1G260MNTB
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Mouser Electronics | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant | 2459 |
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$0.8020 / $1.9100 | Buy Now |
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DISTI #
50159202
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Verical | Trans MOSFET N-CH 40V 26A 8-Pin HSOP EP T/R Min Qty: 97 Package Multiple: 1 Date Code: 2001 | Americas - 1485 |
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$0.7586 / $0.8872 | Buy Now |
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Quest Components | 1188 |
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$0.8260 / $2.3600 | Buy Now | |
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DISTI #
RS1G260MNTB
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TTI | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$0.6280 | Buy Now |
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DISTI #
RS1G260MNTB
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IBS Electronics | MOSFET N-CH 40V 26A 8HSOP N-CHANNEL 40V 26A (TA) 3W (TA) 35W (TC) SURFACE MOU Min Qty: 2500 Package Multiple: 1 | 0 |
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$1.2025 | Buy Now |
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DISTI #
RS1G260MNTB
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Avnet Silica | Power MOSFET N Channel 40 V 80 A 33 Milliohms HSOP 8 Pins Surface Mount (Alt: RS1G260MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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LCSC | 40V 80A 35W 3.3m10V26A 1 N-channel HSOP-8 MOSFETs ROHS | 5 |
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$2.6674 / $2.8288 | Buy Now |
Part Details for RS1G260MNTB
RS1G260MNTB CAD Models
RS1G260MNTB Part Data Attributes
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RS1G260MNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1G260MNTB
ROHM Semiconductor
Power Field-Effect Transistor, 26A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
RS1G260MNTB Frequently Asked Questions (FAQ)
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ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal management system to keep the junction temperature below 125°C. Also, follow the recommended derating curves for voltage and current.
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ROHM recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses. The gate drive circuit should be designed to provide a low impedance path to the gate terminal.
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Use a TVS diode or a zener diode to clamp the voltage across the device. Implement overcurrent protection using a sense resistor and a comparator or a dedicated overcurrent protection IC. Also, ensure that the device is operated within the recommended voltage and current ratings.
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Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body or the pins, avoiding touching the die or the wire bonds.