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Part Details for RS1G120MNTB by ROHM Semiconductor
Results Overview of RS1G120MNTB by ROHM Semiconductor
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
RS1G120MNTB Information
RS1G120MNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS1G120MNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
10AC8974
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Newark | Mosfet, N-Ch, 40V, 40A, Hsop, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0116Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Dissipation Rohs Compliant: Yes |Rohm RS1G120MNTB RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 75 |
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$0.2120 / $0.5500 | Buy Now |
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DISTI #
RS1G120MNTBCT-ND
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DigiKey | MOSFET N-CH 40V 12A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1588 / $0.8500 | Buy Now |
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DISTI #
755-RS1G120MNTB
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Mouser Electronics | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant | 0 |
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$0.1580 / $0.8200 | Order Now |
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DISTI #
65086752
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Verical | Trans MOSFET N-CH 40V 12A 8-Pin HSOP EP T/R Min Qty: 67 Package Multiple: 1 Date Code: 2201 | Americas - 67 |
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$1.2769 | Buy Now |
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Quest Components | 2053 |
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$0.4550 / $1.3000 | Buy Now | |
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DISTI #
RS1G120MNTB
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TME | Transistor: N-MOSFET, unipolar, 40V, 34A, Idm: 48A, 25W, HSOP8 Min Qty: 1 | 0 |
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$0.2470 / $0.8260 | RFQ |
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DISTI #
RS1G120MNTB
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Avnet Silica | Trans MOSFET NCH 40V 12A 8Pin HSOP TR (Alt: RS1G120MNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 60000 |
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Buy Now | |
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LCSC | 40V 34A 16.2m10V12A 25W 2.5V 1 N-channel HSOP-8 MOSFETs ROHS | 1 |
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$0.5703 / $0.7469 | Buy Now |
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Vyrian | Transistors | 10740 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 40V 12A 8HSOP | 4984 |
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$0.3611 / $0.5417 | Buy Now |
Part Details for RS1G120MNTB
RS1G120MNTB CAD Models
RS1G120MNTB Part Data Attributes
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RS1G120MNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1G120MNTB
ROHM Semiconductor
Power Field-Effect Transistor, 12A I(D), 40V, 0.0207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0207 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RS1G120MNTB
This table gives cross-reference parts and alternative options found for RS1G120MNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1G120MNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTTFS5C478NLTAG | onsemi | Check for Price | , WDFN-8 / u8FL, 1500-REEL | RS1G120MNTB vs NTTFS5C478NLTAG |
RS1G120MNTB Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the RS1G120MNTB is -40°C to 125°C.
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To ensure reliability, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal management system to keep the junction temperature below 125°C.
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The maximum allowable power dissipation for the RS1G120MNTB is 1.2W, but this can be affected by the operating temperature and other factors, so be sure to check the datasheet for specific guidelines.
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To handle the RS1G120MNTB's ESD sensitivity, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging.
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The recommended storage temperature range for the RS1G120MNTB is -40°C to 125°C, and it is recommended to store the devices in a dry, cool place away from direct sunlight.