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Part Details for RS1E130GNTB by ROHM Semiconductor
Results Overview of RS1E130GNTB by ROHM Semiconductor
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RS1E130GNTB Information
RS1E130GNTB by ROHM Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RS1E130GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS1E130GNTBCT-ND
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DigiKey | MOSFET N-CH 30V 13A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
681 In Stock |
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$0.1713 / $0.7000 | Buy Now |
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DISTI #
755-RS1E130GNTB
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Mouser Electronics | MOSFETs 4.5V Drive Nch MOSFET RoHS: Compliant | 113 |
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$0.1760 / $0.6900 | Buy Now |
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DISTI #
85949813
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin HSOP EP T/R Min Qty: 188 Package Multiple: 1 Date Code: 2434 | Americas - 2350 |
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$0.3160 / $0.6070 | Buy Now |
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DISTI #
67006326
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Verical | Trans MOSFET N-CH 30V 13A 8-Pin HSOP EP T/R Min Qty: 264 Package Multiple: 1 Date Code: 2301 | Americas - 955 |
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$0.6762 | Buy Now |
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Quest Components | 764 |
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$0.3540 / $0.8850 | Buy Now | |
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DISTI #
RS1E130GNTB
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Avnet Silica | 45V DRIVE NCH MOSFET HSOP8SINGLE NCH DISCRETE (Alt: RS1E130GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
RS1E130GNTB
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2350 |
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$0.1830 / $0.6070 | Buy Now |
Part Details for RS1E130GNTB
RS1E130GNTB CAD Models
RS1E130GNTB Part Data Attributes
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RS1E130GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1E130GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 13A I(D), 30V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0152 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RS1E130GNTB
This table gives cross-reference parts and alternative options found for RS1E130GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E130GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17327Q5A | Texas Instruments | $0.4496 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.5 mOhm 8-VSONP -55 to 150 | RS1E130GNTB vs CSD17327Q5A |
| CSD17527Q5A | Texas Instruments | Check for Price | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm 8-VSONP -55 to 150 | RS1E130GNTB vs CSD17527Q5A |
| CSD17551Q5A | Texas Instruments | Check for Price | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.8 mOhm 8-VSONP -55 to 150 | RS1E130GNTB vs CSD17551Q5A |
RS1E130GNTB Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
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Handle the device in an ESD-controlled environment, wear an ESD strap, and use ESD-safe tools and materials to prevent damage. Avoid touching the device pins or exposing it to static electricity.
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The device is rated for operation up to 150°C, but the maximum junction temperature should not exceed 150°C. Ensure proper heat sinking and thermal management to prevent overheating.
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Use a logic analyzer or oscilloscope to monitor the device's input and output signals. Check the power supply voltage, biasing, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.