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Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RJP020N06T100 by ROHM Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84R7502
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Newark | Mosfet, n Channel,60V,2A, sot-89, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Rohm RJP020N06T100 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1698 |
|
$0.3510 / $0.8600 | Buy Now |
DISTI #
RJP020N06T100CT-ND
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DigiKey | MOSFET N-CH 60V 2A MPT3 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
13974 In Stock |
|
$0.3275 / $1.3700 | Buy Now |
DISTI #
755-RJP020N06T100
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Mouser Electronics | MOSFETs N-CH 60V 2.5A RoHS: Compliant | 9524 |
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$0.3270 / $1.3600 | Buy Now |
DISTI #
66288571
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Verical | Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) MPT T/R Min Qty: 184 Package Multiple: 1 Date Code: 2201 | Americas - 6722 |
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$0.5282 | Buy Now |
DISTI #
30590466
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Verical | Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) MPT T/R Min Qty: 155 Package Multiple: 1 | Americas - 3064 |
|
$0.4460 / $1.1900 | Buy Now |
DISTI #
83670975
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Verical | Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) MPT T/R Min Qty: 168 Package Multiple: 1 Date Code: 2401 | Americas - 1000 |
|
$0.4871 / $0.5282 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 7765 |
|
$0.3375 / $1.1250 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4000 |
|
$0.3334 / $0.9525 | Buy Now |
DISTI #
RJP020N06T100
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TTI | MOSFETs N-CH 60V 2.5A RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Americas - 1000 In Stock |
|
$0.3240 / $0.3360 | Buy Now |
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Future Electronics | N-CHannel 60 V 300 mO 500 mW Surface Mount Power Mosfet - MPT-3 Min Qty: 1000 Package Multiple: 1000 |
14000 null |
|
$0.1510 / $0.1610 | Buy Now |
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RJP020N06T100
ROHM Semiconductor
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Datasheet
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RJP020N06T100
ROHM Semiconductor
Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | MPT3, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RJP020N06T100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RJP020N06T100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
ZVP2120ASTZ | Diodes Incorporated | $0.4360 | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | RJP020N06T100 vs ZVP2120ASTZ |
2SK3944 | SANYO Semiconductor Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN | RJP020N06T100 vs 2SK3944 |
933946340215 | Nexperia | Check for Price | Small Signal Field-Effect Transistor | RJP020N06T100 vs 933946340215 |
ZVP2120ASMTA | Diodes Incorporated | Check for Price | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | RJP020N06T100 vs ZVP2120ASMTA |
TC0604WG | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 1A I(D), 40V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-20 | RJP020N06T100 vs TC0604WG |
VP0106N6 | Supertex Inc | Check for Price | Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | RJP020N06T100 vs VP0106N6 |
PN4392-J14Z | National Semiconductor Corporation | Check for Price | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | RJP020N06T100 vs PN4392-J14Z |
2N7002/T1 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | RJP020N06T100 vs 2N7002/T1 |
PF5101 | Texas Instruments | Check for Price | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 | RJP020N06T100 vs PF5101 |
2SK3396 | Panasonic Electronic Components | Check for Price | Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSSMINI3-F1, 3 PIN | RJP020N06T100 vs 2SK3396 |
The maximum operating temperature range for the RJP020N06T100 is -55°C to 150°C.
The recommended storage temperature range for the RJP020N06T100 is -40°C to 125°C.
The maximum power dissipation for the RJP020N06T100 is 2.5W.
The thermal resistance from junction to ambient for the RJP020N06T100 is 62.5°C/W.
Yes, the RJP020N06T100 is lead-free and RoHS compliant.