-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for RHU002N06T106 by ROHM Semiconductor
Results Overview of RHU002N06T106 by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RHU002N06T106 Information
RHU002N06T106 by ROHM Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RHU002N06T106
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
RHU002N06T106CT-ND
|
DigiKey | MOSFET N-CH 60V 200MA UMT3 Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
14401 In Stock |
|
$0.0462 / $0.3500 | Buy Now |
|
DISTI #
755-RHU002N06T106
|
Mouser Electronics | MOSFETs N-CH 60V 200MA SOT-323 RoHS: Compliant | 0 |
|
Order Now | |
|
DISTI #
RHU002N06T106
|
TTI | MOSFETs N-CH 60V 200MA SOT-323 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.0490 / $0.0740 | Buy Now |
Part Details for RHU002N06T106
RHU002N06T106 CAD Models
RHU002N06T106 Part Data Attributes
|
|
RHU002N06T106
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RHU002N06T106
ROHM Semiconductor
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | UMT3, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RHU002N06T106
This table gives cross-reference parts and alternative options found for RHU002N06T106. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RHU002N06T106, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SK1590 | Renesas Electronics Corporation | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN | RHU002N06T106 vs 2SK1590 |
| 2SK1590A-T1B-AT | Renesas Electronics Corporation | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MINIMOLD, SC-59, 3 PIN | RHU002N06T106 vs 2SK1590A-T1B-AT |
| QN7002-T2B-AT | Renesas Electronics Corporation | Check for Price | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-59, MINI MOLD PACKAGE-3 | RHU002N06T106 vs QN7002-T2B-AT |
| QN7002-T2B-AT | NEC Electronics Group | Check for Price | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-59, MINI MOLD PACKAGE-3 | RHU002N06T106 vs QN7002-T2B-AT |
| 2SK1590-A | Renesas Electronics Corporation | Check for Price | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | RHU002N06T106 vs 2SK1590-A |
RHU002N06T106 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for RHU002N06T106 is -55°C to 150°C.
-
To ensure reliability, follow the recommended derating guidelines, use a suitable thermal management system, and ensure proper PCB design and layout.
-
The recommended gate resistor value for RHU002N06T106 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
-
Yes, RHU002N06T106 is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB design, layout, and thermal management to minimize losses and ensure reliability.
-
Use proper ESD handling and storage procedures, and consider adding ESD protection devices, such as TVS diodes, to the circuit design.