Datasheets
RHRG75120 by:

75A, 1200V, Hyperfast Diode, TO-247-2, 450-TUBE

Part Details for RHRG75120 by onsemi

Results Overview of RHRG75120 by onsemi

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Applications Space Technology Aerospace and Defense

RHRG75120 Information

RHRG75120 by onsemi is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for RHRG75120

Part # Distributor Description Stock Price Buy
DISTI # 08F3557
Newark Hyperfast Diode, 75A, 1.2Kv, To-247, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:75A, Diode Configuration:Single, Forward Voltage Max:3.2V, Reverse Recovery Time:100Ns, Forward Surge Current:500A, No. Of Pins:2Pinsrohs Compliant: Yes |Onsemi RHRG75120 RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $2.6100
  • 500 $2.5400
$2.5400 / $2.6100 Buy Now
DISTI # RHRG75120
IBS Electronics RECTIFIER DIODE AVALANCHE 1 PHASE 1 ELEMENT 75A 1200V V(RRM) SILICON TO-247 Min Qty: 450 Package Multiple: 1 0
  • 120 $2.3920
  • 300 $2.3660
  • 450 $2.4310
  • 750 $2.3400
  • 1,200 $2.3010
$2.3010 / $2.4310 Buy Now
DISTI # RHRG75120
Avnet Silica Diode Switching 12KV 75A 2Pin2Tab TO247 Rail (Alt: RHRG75120) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # RHRG75120
Avnet Silica Diode Switching 12KV 75A 2Pin2Tab TO247 Rail (Alt: RHRG75120) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
Cytech Systems Limited DIODE GEN PURP 1.2KV 75A TO247-2 25000
RFQ
DISTI # RHRG75120
EBV Elektronik Diode Switching 12KV 75A 2Pin2Tab TO247 Rail (Alt: RHRG75120) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days EBV - 60
Buy Now
Flip Electronics Stock 800
RFQ
LCSC 3.2V75A 100ns Independent Type 75A 1.2kV TO-247-2 Fast Recovery / High Efficiency Diodes ROHS 2723
  • 1 $2.2544
  • 10 $1.9507
  • 30 $1.6530
  • 90 $1.4596
  • 450 $1.3720
  • 900 $1.3342
$1.3342 / $2.2544 Buy Now

Part Details for RHRG75120

RHRG75120 CAD Models

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RHRG75120 Part Data Attributes

RHRG75120 onsemi
Buy Now Datasheet
Compare Parts:
RHRG75120 onsemi 75A, 1200V, Hyperfast Diode, TO-247-2, 450-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-247-2
Manufacturer Package Code 340CL
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature FREE WHEELING DIODE
Application HYPERFAST SOFT RECOVERY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 2.6 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 500 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 75 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 1200 V
Reverse Recovery Time-Max 0.1 µs
Surface Mount NO
Technology AVALANCHE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for RHRG75120

This table gives cross-reference parts and alternative options found for RHRG75120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RHRG75120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
RHRG75120 Fairchild Semiconductor Corporation Check for Price Rectifier Diode, Avalanche, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, TO-247 RHRG75120 vs RHRG75120
Part Number Manufacturer Composite Price Description Compare
APT75DQ120BG Microsemi Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN RHRG75120 vs APT75DQ120BG
APT75DQ120B Microsemi Corporation Check for Price Rectifier Diode, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, TO-247, TO-247, 2 PIN RHRG75120 vs APT75DQ120B
APT60D90B Microsemi Corporation Check for Price 60A, 900V, SILICON, RECTIFIER DIODE, TO-247AD, 2 PIN RHRG75120 vs APT60D90B
BYP103 Siemens Check for Price Rectifier Diode, 1 Phase, 1 Element, 45A, 1000V V(RRM), Silicon, TO-218AD RHRG75120 vs BYP103
SML75EUZ12LR3 TT Electronics Resistors Check for Price Rectifier Diode, Avalanche, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, TO-264, TO-264, 2 PIN RHRG75120 vs SML75EUZ12LR3
APT60D80B Advanced Power Technology Check for Price Rectifier Diode, 1 Phase, 1 Element, 60A, 800V V(RRM), Silicon, TO-247AD, 2 PIN RHRG75120 vs APT60D80B
STTA5012TV1 STMicroelectronics Check for Price 25A, 1200V, SILICON, RECTIFIER DIODE, PLASTIC, ISOTOP-4 RHRG75120 vs STTA5012TV1
MUR5150E Motorola Mobility LLC Check for Price 5A, 1500V, SILICON, RECTIFIER DIODE, TO-220AC RHRG75120 vs MUR5150E
BY329-1500S,127 NXP Semiconductors Check for Price DIODE 1500 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode RHRG75120 vs BY329-1500S,127
RURG50100 Intersil Corporation Check for Price 50A, 1000V, SILICON, RECTIFIER DIODE RHRG75120 vs RURG50100

RHRG75120 Related Parts

RHRG75120 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to dissipate heat efficiently.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.

  • Monitor the device's junction temperature (TJ), drain-source voltage (VDS), drain current (ID), and gate-source voltage (VGS) to detect potential faults and ensure reliable operation.

  • Use a gate drive circuit with a low impedance output stage and a high-current capability to minimize switching losses. Ensure the gate drive voltage is within the recommended range (VGS = 10-15 V) and the gate resistance is minimized (RG < 10 ohms).

  • Implement ESD protection measures such as using ESD-sensitive device handling procedures, incorporating ESD protection diodes or TVS devices, and ensuring a low-impedance ground connection to prevent ESD damage.

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