Part Details for RGCL80TK60GC11 by ROHM Semiconductor
Results Overview of RGCL80TK60GC11 by ROHM Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RGCL80TK60GC11 Information
RGCL80TK60GC11 by ROHM Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RGCL80TK60GC11
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
10AH0540
|
Newark | Igbt, Single, 600V, 35A, To-3Pfm, Continuous Collector Current:35A, Collector Emitter Saturation Voltage:1.4V, Power Dissipation:57W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Rohm RGCL80TK60GC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$2.4900 / $5.5900 | Buy Now |
DISTI #
RGCL80TK60GC11-ND
|
DigiKey | IGBT TRENCH FS 600V 35A TO-3PFM Min Qty: 1 Lead time: 22 Weeks Container: Tube |
450 In Stock |
|
$2.3912 / $6.1000 | Buy Now |
DISTI #
755-RGCL80TK60GC11
|
Mouser Electronics | IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. RoHS: Compliant | 0 |
|
$2.6400 / $5.1300 | Order Now |
Part Details for RGCL80TK60GC11
RGCL80TK60GC11 CAD Models
RGCL80TK60GC11 Part Data Attributes
|
RGCL80TK60GC11
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
RGCL80TK60GC11
ROHM Semiconductor
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PFM, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | ROHS COMPLIANT, TO-3PFM, 3 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 565 ns | |
Turn-on Time-Nom (ton) | 114 ns |
RGCL80TK60GC11 Frequently Asked Questions (FAQ)
-
ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
-
To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure proper heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
-
ROHM recommends a gate drive circuit with a resistance of 10-20 ohms and a capacitance of 10-20 nF to ensure proper switching characteristics and minimize ringing.
-
To protect the IGBT, use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and an overcurrent protection circuit, such as a current sense resistor and a comparator.
-
ROHM recommends a dead time of at least 500 ns to ensure proper switching and minimize shoot-through currents in a half-bridge configuration.