Datasheets
RGCL80TK60GC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PFM, 3 PIN

Part Details for RGCL80TK60GC11 by ROHM Semiconductor

Results Overview of RGCL80TK60GC11 by ROHM Semiconductor

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RGCL80TK60GC11 Information

RGCL80TK60GC11 by ROHM Semiconductor is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RGCL80TK60GC11

Part # Distributor Description Stock Price Buy
DISTI # 10AH0540
Newark Igbt, Single, 600V, 35A, To-3Pfm, Continuous Collector Current:35A, Collector Emitter Saturation Voltage:1.4V, Power Dissipation:57W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Rohm RGCL80TK60GC11 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $5.5900
  • 10 $3.8400
  • 25 $3.5700
  • 50 $3.3000
  • 100 $3.0300
  • 250 $2.7600
  • 900 $2.4900
$2.4900 / $5.5900 Buy Now
DISTI # RGCL80TK60GC11-ND
DigiKey IGBT TRENCH FS 600V 35A TO-3PFM Min Qty: 1 Lead time: 22 Weeks Container: Tube 450
In Stock
  • 1 $6.1000
  • 10 $4.0910
  • 450 $2.4913
  • 900 $2.3912
$2.3912 / $6.1000 Buy Now
DISTI # 755-RGCL80TK60GC11
Mouser Electronics IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. RoHS: Compliant 0
  • 1 $5.1300
  • 10 $4.2900
  • 100 $3.4700
  • 450 $3.0900
  • 900 $2.6400
$2.6400 / $5.1300 Order Now

Part Details for RGCL80TK60GC11

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RGCL80TK60GC11 Part Data Attributes

RGCL80TK60GC11 ROHM Semiconductor
Buy Now Datasheet
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RGCL80TK60GC11 ROHM Semiconductor Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PFM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description ROHS COMPLIANT, TO-3PFM, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 565 ns
Turn-on Time-Nom (ton) 114 ns

RGCL80TK60GC11 Related Parts

RGCL80TK60GC11 Frequently Asked Questions (FAQ)

  • ROHM recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure proper heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 150°C.

  • ROHM recommends a gate drive circuit with a resistance of 10-20 ohms and a capacitance of 10-20 nF to ensure proper switching characteristics and minimize ringing.

  • To protect the IGBT, use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and an overcurrent protection circuit, such as a current sense resistor and a comparator.

  • ROHM recommends a dead time of at least 500 ns to ensure proper switching and minimize shoot-through currents in a half-bridge configuration.

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