Part Details for RFP30N06LE by Rochester Electronics LLC
Results Overview of RFP30N06LE by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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RFP30N06LE Information
RFP30N06LE by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for RFP30N06LE
RFP30N06LE CAD Models
RFP30N06LE Part Data Attributes
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RFP30N06LE
Rochester Electronics LLC
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Datasheet
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RFP30N06LE
Rochester Electronics LLC
30A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFP30N06LE
This table gives cross-reference parts and alternative options found for RFP30N06LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP30N06LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFP70N06 | onsemi | $1.3548 | N-Channel Power MOSFET 60V, 70A, 14mΩ, TO-220-3, 800-TUBE | RFP30N06LE vs RFP70N06 |
| RFP30N06LE | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | RFP30N06LE vs RFP30N06LE |
| SSS4N90A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | RFP30N06LE vs SSS4N90A |
| SMP40P06 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 40A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | RFP30N06LE vs SMP40P06 |
| RFG50N05L | Intersil Corporation | Check for Price | 50A, 50V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | RFP30N06LE vs RFG50N05L |
| RFP4N06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 4A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | RFP30N06LE vs RFP4N06 |
| RFG40N10LE | Intersil Corporation | Check for Price | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | RFP30N06LE vs RFG40N10LE |
| RFP45N06 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | RFP30N06LE vs RFP45N06 |
| SPP30N03 | Siemens | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | RFP30N06LE vs SPP30N03 |
| RFP12N10L | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | RFP30N06LE vs RFP12N10L |