Datasheets
RFP22N10 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for RFP22N10 by Thomson Consumer Electronics

Results Overview of RFP22N10 by Thomson Consumer Electronics

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RFP22N10 Information

RFP22N10 by Thomson Consumer Electronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for RFP22N10

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RFP22N10 Part Data Attributes

RFP22N10 Thomson Consumer Electronics
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RFP22N10 Thomson Consumer Electronics Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer THOMSON CONSUMER ELECTRONICS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 22 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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