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Part Details for RFD14N05SM9A by onsemi
Results Overview of RFD14N05SM9A by onsemi
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
RFD14N05SM9A Information
RFD14N05SM9A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RFD14N05SM9A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31Y4003
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Newark | Mosfet Transistor, N Channel, 14 A, 50 V, 100 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi RFD14N05SM9A RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2264 |
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$0.6840 / $1.2900 | Buy Now |
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DISTI #
05B7457
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Newark | N Channel Mosfet, 50V, 14Ma, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi RFD14N05SM9A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3490 / $0.4640 | Buy Now |
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DISTI #
RFD14N05SM9ACT-ND
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DigiKey | MOSFET N-CH 50V 14A TO252AA Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6104 In Stock |
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$0.3185 / $1.1900 | Buy Now |
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DISTI #
RFD14N05SM9A
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Avnet Americas | Trans MOSFET N-CH 50V 14A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: RFD14N05SM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2998 / $0.3107 | Buy Now |
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DISTI #
512-RFD14N05SM9A
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Mouser Electronics | MOSFETs TO-252 RoHS: Compliant | 6801 |
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$0.3300 / $1.1700 | Buy Now |
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DISTI #
E02:0323_00846941
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Arrow Electronics | Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2509 | Europe - 5000 |
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$0.3212 / $0.3306 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET 50V, 14A, 100mΩ RoHS: Compliant | 0 |
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$0.3036 / $0.3309 | Buy Now |
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DISTI #
7948175
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Verical | Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 | Americas - 5000 |
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$0.3230 / $0.3324 | Buy Now |
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Bristol Electronics | Min Qty: 6 | 295 |
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$0.3000 / $0.9375 | Buy Now |
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Quest Components | 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 236 |
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$0.3750 / $1.2500 | Buy Now |
Part Details for RFD14N05SM9A
RFD14N05SM9A CAD Models
RFD14N05SM9A Part Data Attributes
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RFD14N05SM9A
onsemi
Buy Now
Datasheet
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Compare Parts:
RFD14N05SM9A
onsemi
N-Channel Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK-3 / TO-252-3 | |
| Package Description | TO-252AA, 3 PIN | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD14N05SM9A
This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTD8N06E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | RFD14N05SM9A vs MTD8N06E |
| RFD14N05SM | Intersil Corporation | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | RFD14N05SM9A vs RFD14N05SM |
| MTD3055E | Texas Instruments | Check for Price | 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | RFD14N05SM9A vs MTD3055E |
| RFD14N05SM9A | Rochester Electronics LLC | Check for Price | Power Field-Effect Transistor, | RFD14N05SM9A vs RFD14N05SM9A |
RFD14N05SM9A Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the RFD14N05SM9A is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material (TIM) to reduce thermal resistance.
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The recommended gate drive voltage for the RFD14N05SM9A is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
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Yes, the RFD14N05SM9A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
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To protect the RFD14N05SM9A from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.